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NTD110N02RT4

Part No NTD110N02RT4
Manufacturer ON Semiconductor
Catalog FETs - Single
Description MOSFET N-CH 24V 12.5A DPAK / Power MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Manufacturer ON Semiconductor
Packaging Reel
Part Status Obsolete (End Of Life)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 24V
Current - Continuous Drain (Id) at 25°C 12.5A , 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 4.6mOhm at 20A, 10V
Vgs(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 28nC at 4.5V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3440pF at 20V
Power Dissipation (Maximum) 1.5W , 110W (Tc)
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package DPAK
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 804371-NTD110N02RT4
Ultra Librarian 3D Model Ultra Librarian NTD110N02RT4 CAD Model

Description

ON Semiconductor NTD110N02RT4 Overview

The ON Semiconductor NTD110N02RT4 is a high-performance, N-channel power MOSFET designed to deliver efficient power management and conversion. This device is part of ON Semiconductor's portfolio of energy-efficient power MOSFETs and is tailored for a wide range of applications, including computing, automotive, power supply, and motor control systems.

Key Features

  • Low On-Resistance: The NTD110N02RT4 features a very low on-resistance (RDS(on)) of typically 2.5 mΩ at VGS = 4.5 V, which enhances its efficiency by minimizing conduction losses.
  • High Current Capability: This MOSFET can handle continuous drain currents up to 110 A, making it suitable for high-power applications.
  • Enhanced Thermal Performance: The device comes in a DPAK (TO-252) package, which provides excellent thermal performance and helps in maintaining stability under high current conditions.
  • Low Gate Charge: With a low gate charge (QG), this MOSFET ensures fast switching speeds, which is critical for reducing switching losses in power conversion applications.
  • High Avalanche Energy Rating: The NTD110N02RT4 is designed to withstand high energy pulses in the avalanche and commutation modes, ensuring reliability and robustness in harsh environments.

Applications

The NTD110N02RT4 is versatile and can be used in various applications, including:

  • DC/DC Converters
  • Power Supplies for Computing
  • Motor Drives
  • Automotive Applications
  • Power Management Circuits

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the NTD110N02RT4 is no exception. It is manufactured to meet the highest industry standards for performance and reliability, ensuring that it performs consistently over a wide range of temperatures and conditions.

Conclusion

The NTD110N02RT4 from ON Semiconductor is an excellent choice for designers looking for a power MOSFET that offers high efficiency, fast switching, and robust performance. Its combination of low on-resistance, high current handling, and thermal efficiency makes it a highly effective solution for advanced power management applications.

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