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NGTB20N60L2TF1G

Part No NGTB20N60L2TF1G
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 20A TO3PF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr ON Semiconductor
Package Tube
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 80 A
Vce(on) (Max) @ Vge, Ic 1.65V @ 15V, 20A
Power - Max 64 W
Input Type Standard
Gate Charge 84 nC
Td (on/off) @ 25°C 60ns/193ns
Test Condition 300V, 20A, 30Ohm, 15V
Reverse Recovery Time (trr) 70 ns
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-3PFM, SC-93-3
Supplier Device Package TO-3PF-3
Base Product Number NGTB20
Standard Package 30 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 648461-NGTB20N60L2TF1G
Ultra Librarian 3D Model Ultra Librarian NGTB20N60L2TF1G CAD Model

Description

The NGTB20N60L2TF1G is a high-performance insulated gate bipolar transistor (IGBT) developed by ON Semiconductor, a leading provider of semiconductor-based solutions. This IGBT is designed to offer a superior combination of fast switching, low on-state voltage, and high thermal performance, making it an ideal choice for a wide range of power applications.

Key Features

  • High Current Capability: The device can handle continuous collector currents up to 40A, with pulsed collector currents reaching 80A, ensuring robust performance in demanding situations.
  • Low Saturation Voltage: With a typical collector-emitter saturation voltage of only 1.85V, this IGBT ensures efficient operation, leading to reduced power losses and improved overall efficiency.
  • Fast Switching Speed: The NGTB20N60L2TF1G is designed for high-speed switching applications, offering a fast switching performance that enhances the efficiency of power conversion systems.
  • Co-Packaged Free Wheeling Diode: The inclusion of a soft recovery anti-parallel diode helps to minimize recovery losses and reduce electromagnetic interference (EMI), enhancing system reliability.
  • High Temperature Operation: With a maximum operating junction temperature of 175°C, this IGBT can withstand harsh thermal environments, making it suitable for high-temperature applications.

Applications

The NGTB20N60L2TF1G is versatile and can be used in a range of power applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Power Factor Correction (PFC) circuits
  • Induction heating systems
  • Motor drives and inverters
  • Solar inverters and renewable energy systems

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The NGTB20N60L2TF1G is built to meet stringent quality standards, ensuring reliable performance and longevity in the field. With ON Semiconductor's expertise in IGBT technology, customers can expect a product that delivers both efficiency and durability.

Package and Environmental Compliance

The IGBT is offered in a TO-220 full-pack package, which is designed for optimal thermal performance and ease of mounting. Additionally, the NGTB20N60L2TF1G is RoHS compliant, demonstrating ON Semiconductor's dedication to environmental responsibility by avoiding the use of hazardous substances in its products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0233 $60.6990
70+ $1.6601 $116.2070
110+ $1.6082 $176.9020
150+ $1.5564 $233.4600
195+ $1.5045 $293.3775
260+ $1.3488 $350.6880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,880 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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