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NCP5355DR2

Part No NCP5355DR2
Manufacturer ON Semiconductor
Catalog PMIC - Gate Drivers
Description IC DRVR MOSF SYNC BUCK 12V 8SOIC
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Integrated Circuits
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Driven Configuration Half-Bridge
Channel Type Synchronous
Number of Drivers 2
Gate Type N-Channel MOSFET
Supply Voltage - Operating 8 V to 14 V
Logic Voltage - VIL, VIH 0.8V, 2V
Current - Peak Output (Source, Sink) 2A, 2A
Input Type Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap) 26V
Rise and Fall Time 15ns, 15ns
Temperature Range - Operating 0°C to 125°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Win Source Part Number 115530-NCP5355DR2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NCP5355DR2 CAD Model

Description

ON Semiconductor NCP5355DR2: High-Performance Driver MOSFET

The NCP5355DR2 from ON Semiconductor is a robust, high-performance driver MOSFET designed for a variety of demanding applications. This driver MOSFET is an integral component for power management in modern electronic systems, offering exceptional efficiency and reliability. The NCP5355DR2 is engineered to meet the stringent requirements of high-speed switching and power regulation, making it an ideal choice for use in computer servers, power supplies, DC-DC converters, and other sophisticated electronic equipment.

Constructed with state-of-the-art technology, the NCP5355DR2 features a dual, high-performance driver capable of driving two N-channel power MOSFETs in a synchronous buck converter topology. The device provides high peak current drive capability with excellent timing characteristics, which is essential for reducing switching losses and improving overall system efficiency. This driver MOSFET also includes an adaptive non-overlapping gate drive that helps prevent cross-conduction and further optimizes power usage.

One of the key benefits of the NCP5355DR2 is its integrated bootstrap diode, which simplifies the circuit design by reducing the number of external components required. This feature also enhances the performance by providing a more efficient bootstrapping process for the high-side gate drive. Additionally, the driver is designed with under-voltage lockout protection, ensuring that the MOSFETs are only operational when the supply voltage is within a safe range, thus protecting the system from potential damage due to insufficient power supply.

The NCP5355DR2 also boasts a wide operating voltage range, typically from 5V to 12V, allowing for flexibility in various application designs. Its compact SOIC-8 package is space-efficient, making it a perfect fit for applications where board space is at a premium. With its robust thermal performance and built-in features such as shoot-through protection, this driver MOSFET from ON Semiconductor is an excellent choice for designers looking to enhance system reliability and performance.

Overall, the NCP5355DR2 stands out as a high-quality, versatile driver MOSFET that delivers the performance and reliability expected from a leading semiconductor manufacturer like ON Semiconductor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $17.1714 $68.6856
9+ $14.0898 $126.8082
13+ $13.6498 $177.4474
18+ $13.2086 $237.7548
23+ $12.7685 $293.6755
31+ $11.4484 $354.9004
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,360 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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