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MUN5230DW1T1G

Part No MUN5230DW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.25W SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 1k
Resistor - Emitter Base (R2) (Ohms) 1k
Typical Gain (hFE) (Min) 3 @ 5mA, 10V
Max Vce (sat) 250mV @ 5mA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 024611-MUN5230DW1T1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MUN5230DW1T1G CAD Model

Description

ON Semiconductor MUN5230DW1T1G - Dual Bias Resistor Transistor

The MUN5230DW1T1G from ON Semiconductor is a versatile and high-performance dual bias resistor transistor that is designed to simplify circuit design and minimize component count in a wide range of applications. This innovative product combines two independent NPN transistors and incorporates bias resistors to facilitate automatic biasing, making it an ideal solution for digital applications and signal processing where space is at a premium.

Key features of the MUN5230DW1T1G include its small SOT-363 package, which is optimized for minimal footprint and low profile on the PCB (Printed Circuit Board). Each transistor is configured with built-in bias resistors, with one common emitter and separate base and collector connections. This configuration allows for easy implementation in digital switching applications and as an inverter or buffer in logic circuits.

The bias resistors are precisely engineered to provide stable characteristics and to reduce component count, which in turn simplifies circuit design and can improve reliability by reducing potential points of failure. The MUN5230DW1T1G has a maximum collector current rating of 100 mA and a collector-emitter voltage rating of 50 V, making it suitable for a wide range of signal amplification and switching tasks.

ON Semiconductor's commitment to quality ensures that the MUN5230DW1T1G is manufactured to high standards, providing consistent performance and durability. This product is also characterized by its low on-voltage and minimal variation in hFE (DC current gain) over a wide range of operating conditions, which contributes to its stable operation in circuit designs.

Whether you are designing consumer electronics, telecommunication devices, or computing hardware, the MUN5230DW1T1G is an excellent choice for simplifying your circuit while maintaining high performance. Its combination of dual transistors with integrated biasing resistors in a compact package makes it a smart and efficient solution for modern electronic designs.

With the MUN5230DW1T1G, ON Semiconductor continues to deliver innovative solutions that meet the evolving needs of the electronics industry, providing designers with the components they need to create sophisticated, reliable, and space-efficient products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3435 $51.5250
355+ $0.2818 $100.0390
550+ $0.2730 $150.1500
760+ $0.2642 $200.7920
980+ $0.2554 $250.2920
1,315+ $0.2290 $301.1350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 63,000 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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