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NSVMUN5312DW1T2G

Part No NSVMUN5312DW1T2G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS NPN/PNP 50V BIPO SC88-6 / Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr onsemi
Package Tape & Reel
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 22kOhms
Resistor - Emitter Base (R2) 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 250mW
Mounting SMD (SMT)
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number NSVMUN5312
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names NSVMUN5312DW1T2G-ND,2156-NSVMUN5312DW1T2G-488,NSVMUN5312DW1T2GOSDKR,NSVMUN5312DW1T2GOSTR,NSVMUN5312DW1T2GOSCT
Standard Package 3,000
Win Source Part Number 1117781-NSVMUN5312DW1T2G
Ultra Librarian 3D Model Ultra Librarian NSVMUN5312DW1T2G CAD Model

Description

The NSVMUN5312DW1T2G is a cutting-edge electronic component manufactured by ON Semiconductor, a leader in the semiconductor industry. This product is designed for various applications, particularly in the realm of power management and signal processing.

Key Features

  • Dual PNP Transistors: The NSVMUN5312DW1T2G features two PNP transistors in a single package, increasing circuit density and reducing component count in applications.
  • High Current Capability: Capable of handling high current loads, this component is suitable for power regulation tasks in complex circuits.
  • Low Saturation Voltage: The low VCE(sat) ensures higher efficiency and less power dissipation during operation.
  • Surface-Mount Package: Its SOT-363 package is optimized for surface-mount technology, allowing for compact and automated PCB assembly.
  • Lead-Free and RoHS Compliant: In line with modern environmental standards, this product is lead-free and complies with RoHS regulations, minimizing ecological impact.

Applications

The versatility of the NSVMUN5312DW1T2G makes it an excellent choice for a wide range of applications, including but not limited to:

  • Power management modules
  • Signal processing units
  • Audio amplifiers
  • Switching circuits
  • Linear amplification stages

Technical Specifications

Parameter Value
Configuration Dual PNP
Collector-Emitter Voltage (VCEO) -50V
Collector Current (IC) -100mA
Power Dissipation (PD) 300mW
Operating Temperature Range -55°C to +150°C

In conclusion, the NSVMUN5312DW1T2G from ON Semiconductor is a reliable and efficient solution for designers looking to optimize their power management and signal processing systems. Its dual PNP configuration, high current capability, and low saturation voltage make it a valuable addition to any electronic project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
195+ $0.2627 $51.2265
465+ $0.2156 $100.2540
720+ $0.2089 $150.4080
990+ $0.2021 $200.0790
1,280+ $0.1954 $250.1120
1,715+ $0.1752 $300.4680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 195 pcs
Order Increment : 1 pcs
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