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Same model may have multiple batches, images only for reference.
PEMH14,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PEMH14,115

Part No PEMH14,115
Manufacturer Nexperia USA Inc.
Catalog RF Transistors (BJT)
Description TRANS PREBIAS 2NPN 50V SOT666 / Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr Nexperia USA Inc.
Package Tape & Reel (TR)
Product Status Not For New Designs
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA
Power - Max 300mW
Mounting SMD (SMT)
Package / Case SOT-563, SOT-666
Supplier Device Package SOT-666
Base Product Number PEMH14
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names PEMH14 T/R,2156-PEMH14,115-NEX,NEXNEXPEMH14,115,934058927115,PEMH14 T/R-ND
Standard Package 4,000
Win Source Part Number 1134157-PEMH14,115
Ultra Librarian 3D Model Ultra Librarian PEMH14,115 CAD Model

Description

The PEMH14,115 is a dual NPN pre-biased transistor that features a maximum power dissipation of 300 mW and a collector-emitter breakdown voltage of 50 V.

  • Maximum Power Dissipation: 300 mW
  • Collector-Emitter Breakdown Voltage: 50 V
  • Maximum Collector Current: 100 mA
  • Category: Discrete semiconductor products
  • Sub-Category: Transistors, Bipolar Junction Transistors, and Pre-Biased Transistors
  • Package: SOT-666
  • DC Current Gain: 100 @ 1 mA and 5 Vce
  • Operating Temperature: -55 °C to 150 °C

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