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PEMH14,115

Part No PEMH14,115
Manufacturer Nexperia USA Inc.
Catalog RF Transistors (BJT)
Description TRANS PREBIAS 2NPN 50V SOT666 / Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr Nexperia USA Inc.
Package Tape & Reel (TR)
Product Status Not For New Designs
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA
Power - Max 300mW
Mounting SMD (SMT)
Package / Case SOT-563, SOT-666
Supplier Device Package SOT-666
Base Product Number PEMH14
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names PEMH14 T/R,2156-PEMH14,115-NEX,NEXNEXPEMH14,115,934058927115,PEMH14 T/R-ND
Standard Package 4,000
Win Source Part Number 1134157-PEMH14,115
Ultra Librarian 3D Model Ultra Librarian PEMH14,115 CAD Model

Description

The PEMH14,115 is a dual NPN pre-biased transistor that features a maximum power dissipation of 300 mW and a collector-emitter breakdown voltage of 50 V.

  • Maximum Power Dissipation: 300 mW
  • Collector-Emitter Breakdown Voltage: 50 V
  • Maximum Collector Current: 100 mA
  • Category: Discrete semiconductor products
  • Sub-Category: Transistors, Bipolar Junction Transistors, and Pre-Biased Transistors
  • Package: SOT-666
  • DC Current Gain: 100 @ 1 mA and 5 Vce
  • Operating Temperature: -55 °C to 150 °C

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2610 $58.7250
540+ $0.2148 $115.9920
835+ $0.2079 $173.5965
1,150+ $0.2010 $231.1500
1,480+ $0.1952 $288.8960
1,990+ $0.1744 $347.0560
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Availability: 26,990 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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