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RN2905,LF(CT

Part No RN2905,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.2W US6 / Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 200MHz
Power - Max 200mW
Mounting SMD (SMT)
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6
Base Product Number RN2905
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Names RN2905T5LFTTR,RN2905T5LFTTR-ND,RN2905LF(CTTR-ND,RN2905T5LFTDKR-ND,RN2905T5LFT,RN2905LF(CTCT,RN2905T5LFTDKR,RN2905LF(CT,RN2905(T5L,F,T),RN2905 (T5L,F,T),RN2905T5LFTCT,RN2905LF(CTDKR
Standard Package 3,000
Win Source Part Number 1160110-RN2905,LF(CT
Ultra Librarian 3D Model Ultra Librarian RN2905,LF(CT CAD Model

Description

The Toshiba Semiconductor and Storage 1160110-RN2905,LF(CT is a transistor that belongs to the Discrete Semiconductor Products category.

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Maximum Power: 200mW
  • Voltage Collector Emitter Breakdown (Max): 50V
  • Current Collector (Ic) (Max): 100mA
  • Frequency Transition: 200MHz
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Package: Tape & reel
  • Standard Package: 3,000
  • MSL Level: 1 (unlimited)
  • HTSUS Code: 8541.21.0095
  • Alternative Part Numbers: RN2905LF(CT, RN2905T5LFTTR, and RN2905LF(CTTR-ND, among others

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