The KSR2002TA is a robust NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This high-performance transistor is ideal for a wide range of electronic applications, offering reliability and efficiency in a compact SOT-23 package.
Key Features
- High Current Gain Bandwidth Product: The KSR2002TA provides an excellent gain bandwidth product, making it suitable for amplification of analog signals in audio, signal processing, and other high-frequency applications.
- Low Collector-Emitter Saturation Voltage: With its low saturation voltage, this transistor ensures minimal power loss and heat generation, enhancing the overall efficiency of the electronic circuit.
- High Collector Current: It can handle a substantial collector current, making it versatile for use in power switching applications and for driving moderate loads.
- RoHS Compliant: The KSR2002TA meets the Restriction of Hazardous Substances (RoHS) directive, ensuring that it is free from harmful substances and is environmentally friendly.
Applications
The ON Semiconductor KSR2002TA transistor is used in a variety of applications, including:
- General-purpose switching and amplification
- Power management circuits
- Audio amplifiers
- Signal processing
- Driver stages in hi-fi amplifiers and television circuits
Technical Specifications
Parameter
Value
Package
SOT-23
Collector-Emitter Voltage (V<sub>CEO)
30 V
Collector-Base Voltage (V<sub>CBO)
40 V
Emitter-Base Voltage (V<sub>EBO)
5 V
Collector Current (I<sub>C)
600 mA
Power Dissipation (P<sub>D)
350 mW
Operating and Storage Junction Temperature Range
-55°C to +150°C
With its combination of high current capability, low saturation voltage, and high bandwidth, the KSR2002TA from ON Semiconductor is a versatile NPN transistor that can meet the needs of a multitude of electronic circuits.
