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HUF75345S3S

Part No HUF75345S3S
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 55V 75A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 75A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 7mOhm at 75A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 275nC at 20V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 4000pF at 25V
Power Dissipation (Maximum) 325W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK (TO-263AB)
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 400
MSL Level 1 (Unlimited)
Win Source Part Number 1182435-HUF75345S3S
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUF75345S3S CAD Model

Description

ON Semiconductor HUF75345S3S N-Channel Power MOSFET

The HUF75345S3S is a high-performance N-Channel Power MOSFET designed and manufactured by ON Semiconductor, a leader in power and signal management solutions. This MOSFET is part of the UltraFET® series, which is renowned for its high efficiency and reliability in a wide range of power applications.

With a drain-to-source voltage (VDS) of 55V and a continuous drain current (ID) of 75A, the HUF75345S3S is capable of handling high power density requirements with ease. Its RDS(on) value is exceptionally low at just 8.0 mΩ, which translates to reduced conduction losses and improved overall efficiency in applications. This makes it an ideal choice for power supply systems, DC-to-DC converters, motor drives, and other high-power switching applications.

The device is housed in a TO-263 (D2PAK) surface-mount package, which not only allows for efficient heat dissipation but also makes it suitable for compact PCB designs. The HUF75345S3S also features a robust and fast-switching capability that enhances performance in high-frequency circuits.

Another key feature of the HUF75345S3S is its gate charge (QG), which is optimized for low gate drive requirements. This helps in reducing switching losses without compromising on switching speeds, thus maintaining a balance between efficiency and performance.

ON Semiconductor has also incorporated advanced process technology into the HUF75345S3S, which ensures that the MOSFET operates with a high threshold voltage stability and a low leakage current. This increases the reliability and longevity of the device under various operating conditions.

In summary, the HUF75345S3S N-Channel Power MOSFET from ON Semiconductor offers a compelling combination of low on-resistance, high current capability, and fast-switching performance. Its robust design and efficiency make it a go-to component for engineers looking to optimize their power management systems for both performance and size.

For more detailed specifications and application guidelines, designers and engineers are encouraged to consult the official datasheet provided by ON Semiconductor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7622 $53.3540
160+ $0.6254 $100.0640
250+ $0.6059 $151.4750
345+ $0.5863 $202.2735
445+ $0.5668 $252.2260
595+ $0.5082 $302.3790
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,090 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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