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HGTP12N60A4

Part No HGTP12N60A4
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description 600V, SMPS Series N-Channel IGBTs | IGBT 600V 54A 167W TO220AB
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 54A
Current - Collector Pulsed (Icm) 96A
Vce(on) (Maximum) at Vge, Ic 2.7V at 15V, 12A
Maximum Power 167W
Switching Energy 55μJ (on), 50μJ (off)
Input Type Standard
Gate Charge 78nC
Td (on/off) at 25°C 17ns/96ns
Test Condition 390V, 12A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-220-3
Supplier Device Package TO-220-3
Family Part Number HGTP12N60
Manufacturer Pack Quantity 400
MSL Level 1 (Unlimited)
Win Source Part Number 1180377-HGTP12N60A4
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian HGTP12N60A4 CAD Model

Description

The HGTP12N60A4 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This IGBT is part of ON Semiconductor's highly regarded high-speed IGBT family, which is known for its outstanding efficiency and reliability in a wide range of power applications.

Key Features

  • High Efficiency: The device is optimized for minimal conduction and switching losses, making it highly efficient for applications requiring fast switching and high current handling capabilities.
  • High Current Rating: With a continuous collector current rating of 24A at 25°C, this IGBT can handle significant power levels, making it suitable for demanding applications.
  • High Voltage Capability: It has a collector-emitter voltage (Vce) of 600V, which allows it to be used in high voltage circuits, providing excellent voltage sustaining capability.
  • Low Saturation Voltage: The device offers a low Vce(sat) typically at 2.3V, which contributes to reduced power dissipation and improved efficiency.
  • Fast Switching Speed: The HGTP12N60A4 is designed for fast switching, with a typical fall time of 18ns, ensuring high performance in applications where speed is critical.
  • Co-Packaged Diode: This IGBT includes a co-packaged free-wheeling diode with a soft recovery characteristic, which is essential for reducing electromagnetic interference (EMI) and improving overall system reliability.

Applications

The HGTP12N60A4 is ideal for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Motor Control Systems
  • Inductive Heating
  • Welding Equipment
  • Renewable Energy Inverters

Reliability and Quality

ON Semiconductor's commitment to quality ensures that the HGTP12N60A4 IGBT is manufactured to the highest standards, offering robust performance even under harsh conditions. Its TO-220 package provides effective thermal management, which is critical for maintaining stability and extending the product's lifespan. The HGTP12N60A4 is a testament to ON Semiconductor's dedication to providing reliable and efficient power solutions to the industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2248 $61.2400
115+ $1.0050 $115.5750
180+ $0.9736 $175.2480
250+ $0.9422 $235.5500
320+ $0.9108 $291.4560
425+ $0.8166 $347.0550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,200 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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