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BQ4010YMA-85N

Part No BQ4010YMA-85N
Manufacturer Texas Instruments
Catalog RAM
Description IC NVSRAM 64KBIT PARALLEL 28DIP / NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 85 ns 28-DIP Module (18.42x37.72)
Datasheet
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr Texas Instruments
Package Tube
Product Status Obsolete
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 64Kb (8K x 8)
Memory Interface Parallel
Write Cycle Time - Word, Page 85ns
Access Time 85 ns
Voltage - Supply 4.5V ~ 5.5V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting Type Through Hole
Package / Case 28-DIP Module (0.61", 15.49mm)
Supplier Device Package 28-DIP Module (18.42x37.72)
Base Product Number BQ4010
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0041
Other Names 2156-BQ4010YMA-85N-TI,TEXTISBQ4010YMA-85N
Standard Package 14
Win Source Part Number 1223113-BQ4010YMA-85N
Ultra Librarian 3D Model Ultra Librarian BQ4010YMA-85N CAD Model

Description

Product Overview: BQ4010YMA-85N

The BQ4010YMA-85N is a high-performance, non-volatile static RAM (NVSRAM) module designed and manufactured by Texas Instruments. This robust memory component combines a 32K x 8 static RAM with a self-contained lithium energy source and control circuitry, all within a compact 28-pin DIP (Dual In-line Package) module. The integration of non-volatile elements ensures data retention without the need for an external battery, making it a reliable choice for a wide range of applications that require data preservation upon power loss.

Key Features

  • Memory Capacity: 32K x 8 (256K bits) of non-volatile static RAM, providing ample storage for critical data that must be preserved during power outages.
  • Access Time: The BQ4010YMA-85N boasts an access time of 85 ns, allowing for quick read and write operations, which is essential for high-speed computing tasks.
  • Automatic Power-Fail Chip Deselect and Write Protection: In the event of a power failure, the device automatically switches from RAM read/write operations to non-volatile storage mode, ensuring data integrity.
  • Self-Contained Energy Source: The integrated lithium energy cell provides reliable data retention for a minimum of 10 years, eliminating the need for an external battery.
  • Low-Power Operation: Designed for energy efficiency, the BQ4010YMA-85N operates with a typical standby current of only 1 µA, contributing to the overall power conservation of the system it is used in.

Applications

The BQ4010YMA-85N is suitable for a variety of applications where data integrity and retention are critical. These include:

  • Industrial control systems
  • RAID systems
  • Networking equipment and servers
  • Medical equipment
  • Point-of-sale terminals
  • Telecommunication systems

Quality and Reliability

As with all Texas Instruments products, the BQ4010YMA-85N is designed to meet the highest standards of quality and reliability. It is engineered to withstand harsh environments and demanding applications, ensuring consistent performance and longevity.

For detailed specifications, application notes, and support documentation, interested clients are encouraged to visit the Texas Instruments official website or contact their sales and support team.

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