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FQP6N15

Part No FQP6N15
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 150V N-Channel MOSFET | MOSFET N-CH 150V 6.4A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 150V
Id - Continuous Drain Current 6.4A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 600mOhm at 3.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 8.5nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 270pF at 25V
Power Dissipation (Maximum) 63W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1175444-FQP6N15
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQP6N15 CAD Model

Description

ON Semiconductor FQP6N15 MOSFET Overview

The ON Semiconductor FQP6N15 is a high-performance N-Channel QFET® MOSFET designed to deliver efficient power management and conversion. This field-effect transistor is a fundamental component for designers focusing on applications that require fast switching, low on-resistance, and high blocking voltage capabilities.

The FQP6N15 is built with state-of-the-art technology, providing a drain-source voltage (V<sub>DS) of 150V, which ensures that it can handle high voltage requirements with ease. The device is characterized by a continuous drain current (I<sub>D) of 5.3A at 25°C, making it suitable for a wide range of power applications. Its low on-state resistance (R<sub>DS(on)) of 0.48Ω minimizes power losses and improves overall efficiency, which is particularly beneficial in power-intensive circuits.

The FQP6N15 offers a fast switching speed, with a total gate charge (Q<sub>g) of just 9.8 nC. This feature is crucial for applications that demand rapid on-off cycling, such as switching power supplies and motor control systems. The device also exhibits a low gate threshold voltage (V<sub>GS(th)), which ranges from 2V to 4V, allowing for precise control over the switching operations.

ON Semiconductor has packaged the FQP6N15 in a TO-220 package, which is known for its robustness and thermal efficiency. The package is designed to ensure reliable operation even under high-stress conditions, making it a suitable choice for commercial and industrial applications. The TO-220 package also allows for easy mounting on printed circuit boards, facilitating the integration of the FQP6N15 into a variety of electronic systems.

In summary, the FQP6N15 MOSFET from ON Semiconductor is an excellent choice for engineers and designers who require a reliable and efficient solution for high-voltage, high-current, and fast-switching applications. Its robust characteristics, combined with the quality assurance of ON Semiconductor, make it a dependable component for power management tasks in a wide array of electronic products.

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