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FQP10N20

Part No FQP10N20
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 200V N-Channel MOSFET | MOSFET N-CH 200V 10A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 10A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 360mOhm at 5A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 18nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 670pF at 25V
Power Dissipation (Maximum) 87W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1175414-FQP10N20
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQP10N20 CAD Model

Description

ON Semiconductor FQP10N20 MOSFET Overview

The FQP10N20 is a robust and high-performance Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed and manufactured by ON Semiconductor. This device is well-suited for a wide range of power applications, offering a balance of low on-resistance and high blocking voltage to ensure efficient power management and conversion in electronic circuits.

Key Features

  • Voltage Rating: The FQP10N20 is characterized by a drain-source voltage (VDS) of 200V, making it an excellent choice for systems that require high voltage operation.
  • Current Capacity: With a continuous drain current (ID) of 9.4A, this MOSFET can handle significant power, suitable for a variety of demanding applications.
  • Low On-Resistance: The device boasts a low on-state resistance (RDS(on)) of 0.54Ω, which minimizes power loss and improves efficiency during operation.
  • Fast Switching: The FQP10N20 is designed for fast switching, enhancing performance in applications where switching speed is critical.
  • Gate Charge: It features a low total gate charge (Qg), which reduces the energy required to turn the transistor on and off, further enhancing its efficiency.

Applications

The FQP10N20 is versatile and can be used in a range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Inverters
  • Motor Drives
  • DC-DC Converters
  • Battery Management Systems
  • LED Lighting

Reliability and Performance

ON Semiconductor's commitment to quality ensures that the FQP10N20 MOSFET meets the highest standards of reliability and performance. Its robust design is capable of withstanding harsh conditions, making it a reliable choice for industrial and commercial applications. The device is also RoHS compliant, adhering to environmental standards by avoiding the use of hazardous substances.

Conclusion

The FQP10N20 from ON Semiconductor is a powerful and efficient solution for high-voltage, high-current applications. With its low on-resistance, fast switching capabilities, and robust design, it stands out as a component that can significantly enhance power management and conversion efficiency in a variety of electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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