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FQAF16N25

Part No FQAF16N25
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 250V N-Channel MOSFET | MOSFET N-CH 250V 12.4A TO-3PF
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 250V
Id - Continuous Drain Current 12.4A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 230mOhm at 6.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 35nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1200pF at 25V
Power Dissipation (Maximum) 85W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-3PF
Manufacturer Package TO-3P-3 Full Pack
Manufacturer Pack Quantity 360
MSL Level 1 (Unlimited)
Win Source Part Number 1175183-FQAF16N25
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQAF16N25 CAD Model

Description

ON Semiconductor FQAF16N25 Overview

The FQAF16N25 is a high-performance, N-channel QFET® MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This field-effect transistor is engineered to provide exceptional power dissipation, high current handling, and energy efficiency, making it an ideal choice for a wide array of electronic applications.

Key Features

  • High Voltage Capability: The FQAF16N25 is capable of withstanding up to 250V, providing a robust solution for high-voltage applications.
  • Low On-Resistance: With a low RDS(on), this MOSFET ensures minimal power loss and higher efficiency in electronic circuits.
  • High Current Rating: It is designed to handle continuous drain currents up to 16A, accommodating significant power throughput without compromising performance.
  • Fast Switching: The device features fast switching speeds, which is crucial for reducing switching losses and improving performance in high-frequency power conversion systems.
  • TO-3P Package: The robust TO-3P package offers excellent thermal characteristics and is suitable for through-hole mounting, which aids in heat dissipation and ensures a reliable mechanical connection.

Applications

The FQAF16N25 MOSFET is versatile and can be used in a variety of applications, including:

  • Power supply units
  • DC-DC converters
  • Motor drives
  • Inverters
  • Lighting applications
  • Switching regulators

Reliability and Performance

ON Semiconductor's commitment to quality ensures that the FQAF16N25 MOSFET meets stringent standards for reliability and performance. Its design is optimized for minimal on-state resistance while maintaining superior switching performance, which is essential for high-efficiency power management in complex electronic systems.

With its combination of high voltage capability, low on-resistance, and fast switching, the FQAF16N25 from ON Semiconductor is an excellent choice for designers looking to enhance the efficiency and longevity of their power management solutions.

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