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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 75A
Current - Collector Pulsed (Icm) 180A
Vce(on) (Maximum) at Vge, Ic 2.7V at 15V, 20A
Maximum Power 290W
Switching Energy 115μJ (on), 195μJ (off)
Input Type Standard
Gate Charge 35nC
Td (on/off) at 25°C 8ns/35ns
Test Condition 390V, 20A, 3Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-220-3
Supplier Device Package TO-220-3
Manufacturer Pack Quantity 400
MSL Level 1 (Unlimited)
Win Source Part Number 1174203-FGP40N6S2
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FGP40N6S2 CAD Model

Description

ON Semiconductor FGP40N6S2 Overview

The FGP40N6S2 is a high-performance field-effect transistor (FET) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This device is specifically engineered to cater to a wide array of power applications that demand high efficiency, reliability, and thermal performance. The FGP40N6S2 is a part of ON Semiconductor's extensive portfolio of power management solutions, and it is well-suited for both commercial and industrial applications.

Key Features

  • High Current Capability: The FGP40N6S2 is capable of handling high continuous drain currents, making it an excellent choice for applications requiring robust current handling capabilities.
  • Low On-Resistance: With its low R<sub>DS(on), this FET ensures minimal power loss and improved efficiency, which is critical for power-sensitive designs.
  • Fast Switching Speed: The device's fast switching characteristics enable efficient operation at high frequencies, which is beneficial for switching power supplies and other high-speed circuit applications.
  • Enhanced Thermal Performance: The FGP40N6S2 is designed with an optimal thermal footprint that allows for better heat dissipation, ensuring stable performance even under high-temperature conditions.

Applications

  • Power supply units (PSUs)
  • DC-DC converters
  • Motor drives
  • Battery management systems
  • Inverters

Product Specifications

The FGP40N6S2 boasts a 600V drain-source breakdown voltage (V<sub>DSS), which provides a comfortable margin for applications with high voltage requirements. Its threshold voltage (V<sub>th) is specified to ensure consistent performance across different devices. The product comes in a TO-220 package, which is widely accepted in the industry for its ease of mounting and excellent thermal properties.

Quality and Reliability

ON Semiconductor is committed to delivering products that meet the highest standards of quality and reliability. The FGP40N6S2 has undergone rigorous testing to ensure it meets these standards, providing designers with confidence in its performance and longevity.

Environmental Considerations

ON Semiconductor is dedicated to sustainable practices, and the FGP40N6S2 is designed with environmental considerations in mind. It complies with RoHS directives, which restrict the use of certain hazardous substances in electrical and electronic equipment, ensuring a lower environmental impact.

The FGP40N6S2 from ON Semiconductor is a testament to the company's commitment to providing advanced power management solutions that enable energy-efficient and high-performance designs.

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