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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr ON Semiconductor
Package Tube
Product Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 20 A
Current - Collector Pulsed (Icm) 30 A
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 10A
Power - Max 139 W
Switching Energy 150µJ (on), 50µJ (off)
Input Type Standard
Gate Charge 37 nC
Td (on/off) @ 25°C 8ns/52.2ns
Test Condition 400V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr) 37.7 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Base Product Number FGP10N60
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 846448-FGP10N60UNDF
Ultra Librarian 3D Model Ultra Librarian FGP10N60UNDF CAD Model

Description

FGP10N60UNDF IGBT - ON Semiconductor

The FGP10N60UNDF is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This IGBT is optimized for various applications that require fast switching, high efficiency, and reliability. It is particularly suited for use in power management systems, motor control circuits, and renewable energy inverters, among other applications.

Key Features

  • High Current Capability: The FGP10N60UNDF IGBT is capable of handling continuous currents up to 10A, making it suitable for high power applications.
  • High Voltage Rating: With a collector-emitter voltage (Vce) of 600V, this IGBT can safely manage high voltage operations, providing a margin for spikes and surges often encountered in industrial environments.
  • Low On-State Voltage Drop: The device features a low saturation voltage (Vce(sat)) which reduces on-state power dissipation, enhancing overall efficiency.
  • Fast Switching Speed: The fast switching capability minimizes transition losses and improves the performance in applications such as high-frequency converters.
  • Co-Packaged Free Wheeling Diode: The inclusion of a co-packaged fast recovery diode ensures efficient commutation and protection against reverse voltage transients.
  • High Input Impedance: The IGBT has a high input impedance, which reduces gate drive requirements and simplifies the drive circuitry.

Applications

  • AC and DC Motor Drives
  • Uninterruptible Power Supplies (UPS)
  • Induction Heating
  • Power Factor Correction (PFC) Circuits
  • Solar Inverters
  • Welding Equipment

The FGP10N60UNDF IGBT from ON Semiconductor is a robust and versatile component that offers a balance between performance and cost-effectiveness. Its robust design ensures reliable operation even under harsh conditions, making it an excellent choice for designers looking to enhance the efficiency and durability of their power electronic systems.

With its comprehensive feature set and reliable performance, the FGP10N60UNDF is a valuable component for any application demanding high-efficiency power conversion and control.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.9063 $67.9725
175+ $0.7437 $130.1475
270+ $0.7205 $194.5350
375+ $0.6972 $261.4500
480+ $0.6740 $323.5200
645+ $0.6042 $389.7090
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 1,860 pieces
MOQ: 75 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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