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FFSH20120ADN-F155

Part No FFSH20120ADN-F155
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Arrays
Description DIODE SIC 1200V 10A TO247 / Diode Array 1 Pair Common Cathode 1200 V 10A (DC) Through Hole TO-247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Diodes - Rectifiers - Diode Arrays
Mfr ON Semiconductor
Package Tube
Product Status Active
Diode Configuration 1 Pair Common Cathode
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) (per Diode) 10A (DC)
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 200 µA @ 1200 V
Operating Temperature - Junction -55°C ~ 175°C
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number FFSH20120
Standard Package 30 pcs
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 871743-FFSH20120ADN-F155
Ultra Librarian 3D Model Ultra Librarian FFSH20120ADN-F155 CAD Model

Description

Product Overview: FFSH20120ADN-F155

The FFSH20120ADN-F155 is a state-of-the-art SiC Schottky diode, meticulously engineered by ON Semiconductor to cater to high-efficiency and high-performance power conversion applications. This diode is designed to leverage the superior electrical characteristics of Silicon Carbide, making it an ideal choice for systems that demand minimal power loss and high thermal conductivity.

Key Features

  • High Blocking Voltage: With a 1200V blocking voltage, the FFSH20120ADN-F155 is well-suited for high-voltage applications, providing a robust barrier against unexpected voltage spikes.
  • Low Forward Voltage Drop: The device exhibits a low forward voltage drop, which enhances system efficiency by reducing conduction losses.
  • Zero Reverse Recovery Charge: The absence of reverse recovery charge ensures reduced switching losses, making the diode ideal for high-frequency applications.
  • High Surge Current Capability: It is capable of withstanding high surge currents, ensuring reliability and longevity in harsh electrical environments.
  • Temperature Independent Switching Behavior: The diode's performance is stable across a wide temperature range, ensuring consistent operation in various thermal conditions.

Applications

The FFSH20120ADN-F155 is versatile and can be utilized in a variety of applications, such as:

  • Power Supply Units (PSUs)
  • Solar Inverters
  • Electric Vehicle (EV) Charging Stations
  • Power Factor Correction (PFC) Circuits
  • Uninterruptible Power Supplies (UPS)

Quality and Reliability

ON Semiconductor is committed to delivering products that meet the highest standards of quality and reliability. The FFSH20120ADN-F155 is no exception, as it undergoes rigorous testing and quality control measures to ensure that it performs to the specifications under varying conditions and throughout its intended lifespan.

Environmental Considerations

ON Semiconductor is dedicated to environmental stewardship. The FFSH20120ADN-F155 complies with RoHS directives, minimizing the use of hazardous substances in its construction, thereby contributing to the production of environmentally friendly electronic equipment.

In summary, the FFSH20120ADN-F155 from ON Semiconductor is a high-performance, reliable, and environmentally conscious choice for designers and engineers looking to enhance the efficiency and durability of their power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $13.0142 $52.0568
9+ $12.1905 $109.7145
13+ $11.7787 $153.1231
19+ $10.9550 $208.1450
24+ $10.5431 $253.0344
30+ $10.1313 $303.9390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,480 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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