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FDPC8012S

Part No FDPC8012S
Manufacturer ON Semiconductor
Catalog FETs - Arrays
Description MOSFET 2N-CH 25V 13A/26A PWR CLP / PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer ON Semiconductor
Packaging Reel
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) at 25°C 13A, 26A
Rds On (Maximum) at Id, Vgs 7mOhm at 12A, 4.5V
Vgs(th) (Maximum) at Id 2.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 8nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 1075pF at 13V
Power - Max 800mW, 900mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-PowerWDFN
Supplier Device Package Powerclip-33
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 804310-FDPC8012S
Ultra Librarian 3D Model Ultra Librarian FDPC8012S CAD Model

Description

ON Semiconductor FDPC8012S Silicon Carbide (SiC) Power MOSFET

The FDPC8012S is a state-of-the-art Silicon Carbide (SiC) Power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed to meet the high-efficiency and high-performance demands of modern power electronic applications, making it an ideal choice for a wide range of uses, including electric vehicles, solar inverters, and high-performance power supplies.

With its advanced SiC technology, the FDPC8012S offers superior switching performance and higher reliability compared to traditional silicon-based MOSFETs. The device features a low on-resistance (RDS(on)) of just 80 mΩ at a gate drive of 18V, which significantly reduces conduction losses. This low RDS(on) combined with a high blocking voltage of 650V provides an excellent figure of merit (FOM) for high-efficiency power conversion.

The FDPC8012S also boasts an impressive total gate charge (QG) of 22 nC, which ensures fast switching speeds, further enhancing the efficiency of the MOSFET. The reduced switching losses make it particularly suitable for high-frequency applications where efficiency is paramount.

Another key feature of this MOSFET is its robustness under harsh conditions. It is capable of withstanding high-temperature operation, which is critical for reliability in demanding environments. The FDPC8012S also has an integrated Kelvin source connection that reduces gate ringing and improves the switching performance.

ON Semiconductor has also taken care to ensure the FDPC8012S is easy to implement in a variety of circuit designs. It comes in a compact 8x8 mm PQFN package that is optimized for easy mounting and minimal footprint on a PCB. This package is also RoHS compliant and Halogen-free, ensuring that it meets the latest environmental standards for electronic components.

Overall, the FDPC8012S from ON Semiconductor is a high-performance, energy-efficient solution for today's and tomorrow's power electronics challenges. Its advanced features and robust design make it a smart choice for engineers looking to enhance the performance and reliability of their power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.5775 $52.6200
19+ $5.3969 $102.5411
29+ $5.2283 $151.6207
40+ $5.0596 $202.3840
52+ $4.8910 $254.3320
69+ $4.3850 $302.5650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,500 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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