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Reference Date Code 08+
Reference case TO220
Manufacturer ON Semiconductor
Manufacturer Homepage www.onsemi.com
Win Source Part Number 753222-FDP13N50
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDP13N50 CAD Model

Description

ON Semiconductor FDP13N50 MOSFET

The FDP13N50 is a robust N-channel MOSFET from ON Semiconductor, renowned for its high-performance power management applications. This device is designed to handle high continuous drain currents with a rating of up to 13A, making it an ideal choice for a variety of demanding applications.

Key Features

  • High Voltage Capability: The FDP13N50 operates at a maximum drain-source voltage of 500V, providing ample headroom for high voltage applications.
  • Low On-Resistance: With an R<sub>DS(on) of typically 0.27Ω, this MOSFET ensures efficient power handling and minimizes losses during operation.
  • Fast Switching: The device features a fast switching speed, which is critical for reducing switching losses and improving power efficiency in converters and inverters.
  • High Continuous Drain Current: A continuous drain current of 13A allows the FDP13N50 to handle significant power without overheating.
  • Robust Thermal Management: The TO-220 package provides excellent thermal characteristics, ensuring reliable performance even under high power and temperature conditions.

Applications

The FDP13N50 is suitable for a wide range of applications, including:

  • Power supplies
  • DC-AC converters for solar inverters
  • Motor drives
  • Uninterruptible power supplies (UPS)
  • Switching regulators

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DSS) 500V Continuous Drain Current (I<sub>D) 13A Power Dissipation (P<sub>D) 88W On-State Resistance (R<sub>DS(on)) 0.27Ω Operating Temperature Range -55°C to +150°C

Overall, the FDP13N50 from ON Semiconductor is a powerful and reliable MOSFET that delivers high efficiency and performance for industrial and commercial power management applications. Its robust design and thermal management capabilities make it an excellent choice for engineers looking for a high-quality power transistor.

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