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FDMC013P030Z

Part No FDMC013P030Z
Manufacturer ON Semiconductor
Catalog FETs - Single
Description MOSFET P-CHANNEL 30V 54A 8MLP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 54A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 7mOhm at 14A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 135nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 5785pF at 15V
Power Dissipation (Maximum) 30W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-MLP (3.3x3.3)
Manufacturer Package 8-PowerWDFN
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 723532-FDMC013P030Z
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDMC013P030Z CAD Model

Description

ON Semiconductor FDMC013P030Z P-Channel PowerTrench® MOSFET

The ON Semiconductor FDMC013P030Z is a high-performance, P-Channel PowerTrench® MOSFET designed for a range of power management applications. This energy-efficient device is a crucial component for designers looking to improve power density and efficiency in their systems. The FDMC013P030Z is characterized by its low on-resistance and high current handling capability, making it an excellent choice for load switching and power conversion applications.

Key Features:

  • Low On-Resistance: The device features an exceptionally low on-resistance (RDS(on)) of 30 mΩ at VGS = -10 V. This low on-resistance ensures minimal power loss during operation, improving overall efficiency.
  • High Current Capability: With a continuous drain current (ID) of -13 A, the FDMC013P030Z is capable of handling high current loads, making it suitable for demanding applications.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process technology enhances the device's performance by optimizing the cell structure for reduced gate charge and faster switching speeds.
  • Compact Footprint: The MOSFET comes in a compact 3 x 3 mm MLP package, which is ideal for space-constrained applications while still providing excellent thermal performance.
  • High Thermal Performance: The device operates over a wide temperature range and features a maximum junction temperature of 150°C, ensuring reliability in high-temperature environments.

Applications:

The FDMC013P030Z is versatile and can be used in various applications, including:

  • Power management for portable and battery-powered devices
  • DC/DC converters
  • Load switch circuits
  • Power distribution systems
  • Reverse battery protection circuits

In summary, the ON Semiconductor FDMC013P030Z is a robust and efficient P-Channel MOSFET that offers designers a compact, high-performance solution for a wide array of power management tasks. Its low on-resistance, high current capacity, and advanced technology make it a top choice for engineers looking to enhance system performance and reliability.

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