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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 80V
Id - Continuous Drain Current 90A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 7.9mOhm at 80A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 54nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2530pF at 40V
Power Dissipation (Maximum) 150W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D-PAK (TO-252)
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 718365-FDD86369
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDD86369 CAD Model

Description

The ON Semiconductor FDD86369 is a state-of-the-art PowerTrench® MOSFET designed for high-performance power switching applications. This advanced MOSFET is a key component in power management solutions, particularly excelling in areas such as DC/DC converters, power supplies, and motor drives. With its cutting-edge technology, the FDD86369 offers an optimal balance of fast switching, low on-resistance, and cost-effectiveness.

Key Features

  • Low On-Resistance: The FDD86369 boasts an extremely low on-resistance (R<sub>DS(on)), which results in minimal conduction losses and improved overall efficiency in applications.
  • High Current Capability: This MOSFET can handle high current loads, making it suitable for demanding applications that require robust current handling.
  • Fast Switching Speed: The fast switching characteristics of the FDD86369 enable efficient operation at high frequencies, which is beneficial for reducing the size of passive components in power supply designs.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process technology is engineered to optimize the device's electrical and thermal performance.
  • Low Gate Charge: A low total gate charge (Q<sub>g) reduces the power needed to drive the MOSFET, thus conserving energy in the system.

Applications

The versatility of the FDD86369 allows it to be integrated into a wide range of applications, including but not limited to:

  • Power supply circuits for consumer electronics
  • DC/DC converters for computing and telecommunications
  • Synchronous rectification in power converters
  • Motor control circuits for industrial automation
  • Battery management systems for electric vehicles

Product Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 40V Continuous Drain Current (I<sub>D) 80A Power Dissipation (P<sub>D) 48W R<sub>DS(on) 2.5 mΩ Total Gate Charge (Q<sub>g) 30 nC

In conclusion, the ON Semiconductor FDD86369 PowerTrench® MOSFET is a high-performance solution that delivers efficiency, reliability, and power density for a variety of power management applications. Its superior electrical characteristics ensure that it meets the rigorous demands of modern electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.4198 $50.8158
51+ $1.9855 $101.2605
78+ $1.9235 $150.0330
108+ $1.8614 $201.0312
139+ $1.7994 $250.1166
186+ $1.6132 $300.0552
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 18,388 pieces
MOQ: 21 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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