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FDD6796

Part No FDD6796
Manufacturer ON Semiconductor
Catalog FETs - Single
Description N-Channel PowerTrench® MOSFET 25 V, 40 A, 5.7 mΩ | MOSFET N-CH 25V 20A D-PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 25V
Id - Continuous Drain Current 20A, 40A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 5.7mOhm at 20A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 41nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2315pF at 13V
Power Dissipation (Maximum) 3.7W, 42W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D-PAK (TO-252)
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1173780-FDD6796
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDD6796 CAD Model

Description

The ON Semiconductor FDD6796 is a high-performance N-Channel PowerTrench® MOSFET designed to deliver efficient power management and conversion in a compact package. This device is optimized for fast switching applications and is a perfect choice for a wide range of power applications, including power supplies, DC-DC converters, motor drives, and other switching applications.

Key Features

  • Low Gate Charge (Qg): This MOSFET features a low gate charge, which enhances the overall efficiency of the device by reducing switching losses.
  • High Continuous Drain Current (Id): With a high continuous drain current, the FDD6796 can handle a significant amount of power, making it suitable for demanding applications.
  • High Power Dissipation: The device is capable of dissipating high levels of power, which is crucial for maintaining stability and performance under varying load conditions.
  • Low RDS(on): Featuring a low on-state resistance, the FDD6796 minimizes conduction losses, which improves overall efficiency and thermal performance.

Applications

The versatility of the FDD6796 allows it to be used in a variety of applications, including:

  • Power Supply Circuits
  • DC-DC Converters
  • Motor Control Circuits
  • Power Management Solutions

Specifications

Parameter Value
VDS 30V
ID 13.5A
Qg (Typ) 8.2nC
RDS(on) (Max) 8.5mΩ

Package and Quality

The FDD6796 comes in a robust D-PAK (TO-252) package that ensures reliable operation even in harsh environments. ON Semiconductor's commitment to quality ensures that this MOSFET meets the highest industry standards for performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
360+ $0.1605 $57.7800
880+ $0.1317 $115.8960
1,355+ $0.1282 $173.7110
1,870+ $0.1236 $231.1320
2,430+ $0.1190 $289.1700
3,230+ $0.1074 $346.9020
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,100 pieces
MOQ: 360 pcs
Order Increment : 1 pcs
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