The ON Semiconductor FDD6796 is a high-performance N-Channel PowerTrench® MOSFET designed to deliver efficient power management and conversion in a compact package. This device is optimized for fast switching applications and is a perfect choice for a wide range of power applications, including power supplies, DC-DC converters, motor drives, and other switching applications.
Key Features
- Low Gate Charge (Qg): This MOSFET features a low gate charge, which enhances the overall efficiency of the device by reducing switching losses.
- High Continuous Drain Current (Id): With a high continuous drain current, the FDD6796 can handle a significant amount of power, making it suitable for demanding applications.
- High Power Dissipation: The device is capable of dissipating high levels of power, which is crucial for maintaining stability and performance under varying load conditions.
- Low RDS(on): Featuring a low on-state resistance, the FDD6796 minimizes conduction losses, which improves overall efficiency and thermal performance.
Applications
The versatility of the FDD6796 allows it to be used in a variety of applications, including:
- Power Supply Circuits
- DC-DC Converters
- Motor Control Circuits
- Power Management Solutions
Specifications
Parameter
Value
V<sub>DS
30V
I<sub>D
13.5A
Q<sub>g (Typ)
8.2nC
R<sub>DS(on) (Max)
8.5mΩ
Package and Quality
The FDD6796 comes in a robust D-PAK (TO-252) package that ensures reliable operation even in harsh environments. ON Semiconductor's commitment to quality ensures that this MOSFET meets the highest industry standards for performance and reliability.
