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FDB3672

Part No FDB3672
Manufacturer ON Semiconductor
Catalog FETs - Single
Description N-Channel PowerTrench MOSFET | MOSFET N-CH 100V 44A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 7.2A, 44A
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Maximum) at Id, Vgs 28mOhm at 44A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 31nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1710pF at 25V
Power Dissipation (Maximum) 120W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package TO-263AB
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 800
MSL Level 1 (Unlimited)
Win Source Part Number 1173707-FDB3672
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDB3672 CAD Model

Description

ON Semiconductor FDB3672 N-Channel PowerTrench® MOSFET

The ON Semiconductor FDB3672 is a high-performance N-Channel PowerTrench® MOSFET designed to deliver efficient power management and conversion for a wide range of applications. This semiconductor device is a testament to ON Semiconductor's commitment to providing innovative solutions that enhance energy efficiency and reliability.

Key Features:

  • High Current Capability: The FDB3672 is capable of handling a continuous drain current of up to 80A, making it suitable for high-power applications.
  • Low RDS(on): With a low on-state resistance of just 8.0 mΩ, this MOSFET ensures minimal power loss and improved overall efficiency.
  • High Voltage Tolerance: The device has a drain-to-source voltage (VDSS) of 100V, providing a robust solution for systems that experience high voltage transients.
  • Fast Switching Speed: Its fast switching capability enhances performance in switching applications, reducing switching losses and improving response times.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process technology minimizes on-state resistance while maintaining superior switching performance, which is critical for power efficiency.

Applications:

The FDB3672 is versatile and can be used in a variety of applications including:

  • DC/DC converters
  • Motor drives
  • Power supply systems
  • Automotive applications
  • Power management circuits

Quality and Reliability:

ON Semiconductor is known for its high standards in quality and reliability, and the FDB3672 is no exception. It is designed to meet stringent requirements, ensuring a long operational life and consistent performance even in the most demanding conditions.

Environmental Compliance:

The FDB3672 complies with RoHS and is free from environmentally harmful substances. ON Semiconductor is committed to environmental stewardship and ensures that its products are suitable for eco-friendly applications.

In conclusion, the ON Semiconductor FDB3672 N-Channel PowerTrench® MOSFET is a powerful solution for engineers looking to optimize power efficiency and performance in their designs. Its robustness, coupled with ON Semiconductor's reputation for quality, makes it an excellent choice for a wide array of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,300 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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