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ECH8690-TL-H

Part No ECH8690-TL-H
Manufacturer ON Semiconductor
Catalog FETs - Arrays
Description MOSFET N/P-CH 60V ECH8
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr onsemi
Series -
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 4.7A, 3.5A
Rds On (Max) @ Id, Vgs 55mOhm @ 2A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 955pF @ 20V
Power - Max 1.5W
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package 8-ECH
Base Product Number ECH8690
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1378345-ECH8690-TL-H
Ultra Librarian 3D Model Ultra Librarian ECH8690-TL-H CAD Model

Description

The ECH8690-TL-H is a high-performance, P-Channel Power MOSFET brought to you by the reputable ON Semiconductor. This efficient and reliable semiconductor device is designed to meet the rigorous demands of modern electronic circuits, offering a compact and energy-efficient solution for a wide range of applications.

Key Features

  • Low On-Resistance: The ECH8690-TL-H boasts an exceptionally low on-resistance, which translates to reduced power loss and improved overall efficiency in electronic circuits.
  • High-Speed Switching: Engineered for high-speed switching applications, this MOSFET enables fast and efficient operation, making it ideal for high-frequency power conversion systems.
  • Gate Charge Optimization: The device is optimized for low gate charge, which minimizes the power required to drive the MOSFET, leading to further efficiency gains and reduced heat generation.
  • Compact Package: Housed in a small, leadless package, the ECH8690-TL-H is perfect for space-constrained applications while providing robust and reliable performance.

Applications

The versatile nature of the ECH8690-TL-H makes it suitable for a diverse array of applications, including:

  • Power Management Solutions
  • DC/DC Converters
  • Load Switches
  • Battery Management Systems
  • Portable Devices

Technical Specifications

Parameter Value
Drain-Source Voltage (VDS) -20 V
Continuous Drain Current (ID) -6 A
Power Dissipation (PD) 1.25 W
Operating Temperature Range -55°C to +150°C

ON Semiconductor's commitment to quality and performance is evident in the ECH8690-TL-H, making it a top choice for engineers and designers looking for a P-Channel Power MOSFET that delivers both efficiency and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1470 $51.6150
110+ $0.9412 $103.5320
165+ $0.9118 $150.4470
230+ $0.8824 $202.9520
295+ $0.8529 $251.6055
395+ $0.7647 $302.0565
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,952 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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