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BAS21M3T5G

Part No BAS21M3T5G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 250V 200MA SOT723
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr ON Semiconductor
Package Tape & Reel
Product Status Active
Technology Standard
Voltage - DC Reverse (Vr) (Max) 250 V
Current - Average Rectified (Io) 200mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package SOT-723
Operating Temperature - Junction -55°C ~ 150°C
Base Product Number BAS21
Standard Package 8,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0070
Win Source Part Number 912810-BAS21M3T5G
Ultra Librarian 3D Model Ultra Librarian BAS21M3T5G CAD Model

Description

ON Semiconductor BAS21M3T5G High Voltage Switching Diode

The BAS21M3T5G from ON Semiconductor is a high-performance, surface-mount switching diode that is designed to meet the requirements of a wide range of electronic applications. This component is particularly well-suited for high-voltage switching operations, making it an ideal choice for circuit designers looking for reliability and efficiency in their designs.

The BAS21M3T5G boasts a repetitive peak reverse voltage of 250V, which allows it to handle high voltage requirements with ease. It features a continuous forward current of 200mA, ensuring that it can support a significant amount of current during operation without degradation or failure. This makes the diode capable of handling a variety of switching applications, including inverters, converters, and other high-frequency circuits.

With a fast switching speed, the BAS21M3T5G diode provides excellent performance in circuits where quick transitions are critical. This characteristic is essential for minimizing power loss and improving the overall efficiency of electronic devices. The diode's fast reverse recovery time contributes to its ability to switch between states rapidly, further enhancing its suitability for high-speed applications.

The device comes in a compact SOT-23 package, which is a small and efficient form factor that is ideal for space-constrained applications. The surface-mount design of the BAS21M3T5G allows for easier assembly and integration into printed circuit boards (PCBs), providing a streamlined solution for mass production and automated manufacturing processes.

In terms of reliability, ON Semiconductor's BAS21M3T5G diode is designed to withstand harsh conditions. It operates within a junction temperature range of -55°C to +150°C, offering stability across a wide temperature spectrum. This durability makes it suitable for use in industrial and automotive environments where temperatures can vary significantly.

Overall, the BAS21M3T5G from ON Semiconductor is a versatile and robust diode that provides high-voltage switching capabilities with fast response times. Its compact footprint, high reliability, and exceptional performance make it a top choice for engineers and designers in need of a dependable switching solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,175+ $0.0492 $57.8100
2,860+ $0.0404 $115.5440
4,425+ $0.0392 $173.4600
6,100+ $0.0379 $231.1900
7,890+ $0.0367 $289.5630
10,565+ $0.0328 $346.5320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,720 pieces
MOQ: 1175 pcs
Order Increment : 1 pcs
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