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AFGB30T65SQDN

Part No AFGB30T65SQDN
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description 650V/30A FS4 IGBT TO263 A / IGBT 650 V 60 A 220 W Surface Mount D²PAK-3 (TO-263-3)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Manufacturer onsemi
Packaging Reel - TR
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 30A
Power - Max 220 W
Input Type Standard
Gate Charge 56 nC
Td (on/off) @ 25°C 14.5ns/63.2ns
Test Condition 400V, 30A, 6Ohm, 15V
Reverse Recovery Time (trr) 245 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Case / Package TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK-3 (TO-263-3)
Base Product Number AFGB30
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number ,488-AFGB30T65SQDNTR,AFGB30T65SQDN-ND,488-AFGB30T65SQDNDKR,488-AFGB30T65SQDNCT
Standard Package 800
Win Source Part Number 1325546-AFGB30T65SQDN
Ultra Librarian 3D Model Ultra Librarian AFGB30T65SQDN CAD Model

Description

ON Semiconductor AFGB30T65SQDN: A Robust Power Solution

The AFGB30T65SQDN from ON Semiconductor is an advanced power device designed to cater to the demanding needs of modern electronic applications. This silicon carbide (SiC) MOSFET is part of ON Semiconductor's high-performance portfolio, offering superior efficiency and reliability for a wide range of power systems.

Key Features

  • High-Efficiency SiC MOSFET: The device utilizes silicon carbide technology, which provides higher efficiency than traditional silicon devices due to its lower on-resistance and reduced switching losses.
  • 650V Rated Breakdown Voltage: With a high breakdown voltage of 650V, the AFGB30T65SQDN is well-suited for high-voltage applications, offering a robust solution for power conversion systems.
  • Low On-Resistance: The low on-resistance (RDS(on)) characteristic of this MOSFET means it can handle high currents with minimal conduction losses, enhancing overall system efficiency.
  • High-Speed Switching: Designed for fast switching applications, this device minimizes switching losses, which is critical for power supplies, inverters, and other applications requiring high-frequency operation.
  • Optimized for Ruggedness: The AFGB30T65SQDN is built to withstand harsh conditions, featuring a robust body diode and excellent thermal performance, ensuring reliability under stress.
  • Easy to Drive: This SiC MOSFET is easy to drive with standard gate drive voltages, simplifying the design and integration process into existing systems.

Applications

The AFGB30T65SQDN is a versatile component that can be used in a variety of applications, including:

  • Power supply units (PSUs)
  • Electric vehicle (EV) chargers
  • Solar inverters
  • Uninterruptible power supplies (UPS)
  • Induction heating systems
  • High-performance computing (HPC)

Conclusion

ON Semiconductor's AFGB30T65SQDN SiC MOSFET is a testament to the company's commitment to providing innovative, energy-efficient, and robust power solutions. Its high breakdown voltage, low on-resistance, and fast switching capabilities make it an ideal choice for designers looking to enhance the performance and reliability of their power systems. Whether it's for industrial, automotive, or renewable energy applications, the AFGB30T65SQDN is engineered to deliver unparalleled performance where it matters most.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $23.4615 $70.3845
6+ $19.2504 $115.5024
10+ $18.6486 $186.4860
13+ $18.0469 $234.6097
17+ $17.4463 $296.5871
23+ $15.6410 $359.7430
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Availability: 3,100 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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