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2SA1257G5-TB

Part No 2SA1257G5-TB
Manufacturer ON Semiconductor
Catalog Electronic Wholesale
Sample
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Reference Date Code 07+
Reference case SOT23
Manufacturer ON Semiconductor
Manufacturer Homepage www.onsemi.com
Win Source Part Number 751090-2SA1257G5-TB
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SA1257G5-TB CAD Model

Description

The ON Semiconductor 2SA1257G5-TB is a high-quality PNP transistor that is designed for general purpose and amplifier applications. This semiconductor device is well-suited for a variety of electronic circuits, offering reliable performance and consistent quality that engineers and designers have come to expect from ON Semiconductor products.

Key Features

  • Transistor Type: PNP - This transistor is a PNP type, meaning that it is composed of a layer of N-doped semiconductor sandwiched between two layers of P-doped material. The direction of current and voltage in PNP transistors is opposite to that of NPN transistors.
  • High Current Gain Bandwidth Product: The 2SA1257G5-TB offers a high current gain bandwidth product (fT), which makes it suitable for applications requiring high-frequency performance.
  • Low Saturation Voltage: This transistor has a low collector-emitter saturation voltage, which translates to higher efficiency and less power dissipation during operation.
  • Package Type: The device comes in a TB package, which is designed for optimal heat dissipation and space-saving on the PCB.
  • RoHS Compliant: The 2SA1257G5-TB is RoHS compliant, ensuring that it meets the European Union's restrictions on the use of certain hazardous substances in electrical and electronic equipment.

Applications

The 2SA1257G5-TB PNP transistor from ON Semiconductor is versatile and can be used in various applications, including:

  • Audio frequency amplifier stages
  • Signal processing
  • Switching and regulation systems
  • Driver stages in hi-fi amplifiers and television circuits

Technical Specifications

  • Collector-Emitter Voltage (VCEO): The maximum voltage across the collector-emitter terminals.
  • Collector Current (IC): The maximum continuous collector current the transistor can handle.
  • Power Dissipation (Pd): The maximum power the transistor can dissipate without exceeding its maximum junction temperature.
  • Operating Junction Temperature Range (Tj): The range of temperatures over which the transistor can operate without failure.

For detailed technical specifications, please refer to the official datasheet provided by ON Semiconductor. This will ensure that you have the most accurate and up-to-date information for designing and implementing the 2SA1257G5-TB into your electronic projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1686 $58.1670
835+ $0.1386 $115.7310
1,295+ $0.1340 $173.5300
1,790+ $0.1294 $231.6260
2,295+ $0.1259 $288.9405
3,095+ $0.1120 $346.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,450 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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