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2N6035G

Part No 2N6035G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP DARL 60V 4A TO-225AA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Transistor Type PNP - Darlington
Current - Collector (Ic) (Maximum) 4A
Voltage - Collector Emitter Breakdown (Maximum) 60V
Vce Saturation (Maximum) @ Ib, Ic 3V @ 40mA, 4A
Current - Collector Cutoff (Maximum) 100μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 750 @ 2A, 3V
Power - Max 40W
Operating Temperature Range -65°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-225AA, TO-126-3
Manufacturer Package TO-225AA
Win Source Part Number 762272-2N6035G
Family Name 2N6035
Introduction Date August 31, 1995
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2024
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N6035G CAD Model

Description

ON Semiconductor 2N6035G Bipolar Power Transistor

The 2N6035G is a robust bipolar power transistor designed and manufactured by ON Semiconductor, a leading name in the semiconductor industry. This device is engineered to deliver high performance in a wide array of applications, making it a versatile component for your power management solutions.

Key Features:

  • Voltage and Current Ratings: The 2N6035G boasts a collector-emitter voltage (VCEO) of 80V, and a collector current (IC) rating of up to 4A, ensuring it can handle moderate power applications with ease.
  • Power Dissipation: With a power dissipation of 40W, this transistor can effectively manage the energy within a circuit without overheating, making it reliable for continuous operation.
  • Complementary PNP Type: The 2N6035G is the NPN type, and it has a complementary PNP type, offering flexibility in designing push-pull configurations for better efficiency in amplification circuits.
  • High Gain Bandwidth Product: This transistor features a high gain bandwidth product (fT), which allows it to operate effectively at higher frequencies, making it suitable for audio amplifiers and signal processing applications.

Applications:

The 2N6035G is commonly used in a variety of applications, including:

  • Power switching circuits
  • Linear amplifiers
  • Audio amplifiers
  • Signal processing
  • Regulatory systems

Quality and Reliability:

ON Semiconductor is committed to providing high-quality products. The 2N6035G is manufactured with stringent quality control processes, ensuring reliability and performance consistency. This transistor is available in a TO-225 package, which is widely recognized for its robustness and thermal efficiency.

Environmental Considerations:

The 2N6035G is designed with environmental consciousness in mind. ON Semiconductor ensures that their products, including this transistor, meet various international standards for environmental safety and sustainability. This commitment helps customers in designing eco-friendly products.

In conclusion, the ON Semiconductor 2N6035G bipolar power transistor is a high-quality component that offers reliability, efficiency, and versatility for a broad range of power applications. Its robust design and superior performance make it an excellent choice for designers and engineers looking to enhance their electronic systems.

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