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PMBFJ175,215

Part No PMBFJ175,215
Manufacturer NXP / Nexperia
Catalog JFETs (Junction Field Effect)
Description JFET P-CH 30V 0.3W SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Voltage - Breakdown (V(BR)GSS) 30V
Drain-Source Breakdown Voltage 30V
Current - Drain (Idss) @ Vds (Vgs=0) 7mA @ 15V
Voltage - Cutoff (VGS off) @ Id 3V @ 10nA
Max Input Capacitance 8pF @ 10V (VGS)
Resistance - RDS(On) 125 Ohm
Maximum Power Dissipation 300mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23 (TO-236AB)
Win Source Part Number 100348-PMBFJ175,215
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMBFJ175,215 CAD Model

Description

Introducing the NXP PMBFJ175,215 P-Channel Junction Field-Effect Transistor

The NXP PMBFJ175,215 is a high-performance P-Channel Junction Field-Effect Transistor (JFET) designed to deliver efficient power control and signal amplification in various electronic applications. This JFET is a part of NXP's acclaimed semiconductor product line, known for its reliability and innovative technology. Ideal for analog switches, choppers, commutators, and amplifiers, the PMBFJ175,215 offers designers a compact and effective solution for their circuit designs.

With its P-channel configuration, the PMBFJ175,215 allows for a low gate drive power, reducing the overall power consumption of the system it is integrated into. This characteristic is particularly beneficial for battery-powered devices where power efficiency is crucial. The transistor operates in enhancement mode, which means it requires a negative gate-source voltage to turn it off, providing an inherent fail-safe feature in the event of a gate control loss.

The PMBFJ175,215 boasts a drain-source voltage (Vds) of -30V and a continuous drain current (Id) of -3mA, making it suitable for handling moderate power levels while maintaining a low threshold voltage. This ensures that the device can be easily controlled with low voltage signals, which is essential for interfacing with microcontrollers and other logic-level devices.

Encapsulated in a TO-92 package, the PMBFJ175,215 is designed for through-hole mounting, which simplifies the assembly process and provides robust mechanical stability. This package type also offers good thermal performance, ensuring that the device operates within its specified temperature range without the need for additional heat sinking in most applications.

Key features of the NXP PMBFJ175,215 include:

  • P-Channel JFET technology
  • Low gate drive power
  • Enhancement-mode operation
  • Drain-source voltage (Vds): -30V
  • Continuous drain current (Id): -3mA
  • TO-92 package for easy through-hole mounting

In summary, the NXP PMBFJ175,215 is an excellent choice for designers looking for a reliable and efficient P-Channel JFET. Its low power consumption, ease of control, and stable performance make it an ideal component for a wide range of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
275+ $0.2125 $58.4375
665+ $0.1744 $115.9760
1,030+ $0.1686 $173.6580
1,410+ $0.1640 $231.2400
1,825+ $0.1582 $288.7150
2,440+ $0.1421 $346.7240
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 60,000 pieces
MOQ: 275 pcs
Order Increment : 1 pcs
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