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PMBFJ109,215

Part No PMBFJ109,215
Manufacturer NXP / Nexperia
Catalog JFETs (Junction Field Effect)
Description JFET N-CH 25V 250MW SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Active
Polarity N-Channel
Voltage - Breakdown (V(BR)GSS) 25V
Drain-Source Breakdown Voltage 25V
Current - Drain (Idss) @ Vds (Vgs=0) 40mA @ 15V
Voltage - Cutoff (VGS off) @ Id 6V @ 1μA
Max Input Capacitance 30pF @ 10V (VGS)
Resistance - RDS(On) 12 Ohm
Maximum Power Dissipation 250mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23 (TO-236AB)
Win Source Part Number 104563-PMBFJ109,215
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Audio, Power Management
Ultra Librarian 3D Model Ultra Librarian PMBFJ109,215 CAD Model

Description

The NXP PMBFJ109,215 is a high-performance Junction Field-Effect Transistor (JFET) designed for a wide range of applications that require low power and high speed. This particular JFET is a part of NXP's acclaimed semiconductor product line, which is known for reliability and efficiency in various electronic circuits.

Key Features

  • Low Cut-Off Voltage: The PMBFJ109,215 features a low cut-off voltage, making it suitable for battery-powered circuits and energy-sensitive applications.
  • High Input Impedance: With its high input impedance, this JFET ensures minimal loading on previous stages of a circuit, thus preserving signal integrity.
  • Fast Switching: The device is capable of fast switching speeds, ideal for high-frequency or pulse-width-modulated (PWM) applications.
  • Low Noise: It exhibits low noise characteristics, which is beneficial for audio amplifiers, preamplifiers, and sensitive measurement equipment.
  • Surface-Mount Package: The PMBFJ109,215 comes in a compact, surface-mount SOT23 package, which is perfect for space-constrained applications.

Applications

The versatile nature of the NXP PMBFJ109,215 JFET makes it suitable for a variety of applications, including:

  • Choppers and Switches
  • Analog Switches
  • Audio Amplifiers and Preamps
  • Buffer Amplifiers
  • Low-Noise Signal Processing

Technical Specifications

Parameter Value
Drain-Source Voltage (Vds) 25V
Gate-Source Voltage (Vgs) -25V
Drain Current (Id) 10 mA
Power Dissipation (Pd) 350 mW
Operating Temperature Range -55°C to +150°C

The NXP PMBFJ109,215 JFET's combination of low power consumption, high speed, and precision makes it an excellent choice for designers looking for a dependable and versatile component for their electronic designs.

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