Product Overview: BAS316 /BAS316/DG/B2
The BAS316 /BAS316/DG/B2 is a high-quality switching diode from NXP Semiconductors, renowned for its efficiency and reliability in a variety of electronic applications. This product is designed to meet the demanding requirements of fast switching devices in modern electronic circuits.
Key Features
- Fast Switching Speed: The BAS316 is engineered for very fast switching, with a reverse recovery time that ensures high efficiency in circuits where rapid switching is crucial.
- Low Leakage Current: With its low leakage current, this diode is an excellent choice for low-power applications, contributing to energy savings and extended battery life in portable devices.
- High Breakdown Voltage: The device is capable of withstanding high voltages, making it suitable for use in high-voltage applications without compromising performance.
- Surface-Mount Package: The BAS316/DG/B2 comes in a small, surface-mount SOD-323 package, which is ideal for space-constrained applications and allows for efficient use of PCB real estate.
Applications
The BAS316 /BAS316/DG/B2 is versatile and can be used in a wide range of applications, including:
- High-speed switching in digital circuits
- Switching power supplies
- DC-DC converters
- Reverse polarity protection
- Portable and battery-powered devices
Technical Specifications
| Parameter |
Value |
| Package |
SOD-323 |
| Maximum Repetitive Reverse Voltage (VRRM) |
100 V |
| Average Rectified Forward Current (IF(AV)) |
250 mA |
| Non-Repetitive Peak Forward Surge Current (IFSM) |
2 A |
| Reverse Recovery Time (trr) |
4 ns |
| Operating Junction Temperature Range (Tj) |
-65°C to +150°C |
With its robust design and high-performance characteristics, the BAS316 /BAS316/DG/B2 from NXP is a reliable choice for designers and engineers looking to enhance the efficiency and longevity of their electronic products.