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P0403BDG P0403BD

Part No P0403BDG P0403BD
Manufacturer NIKO-SEM
Catalog Electronic Wholesale
Sample
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ECAD Module
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Reference Date Code 12+
Reference case SOT-252
Manufacturer NIKO-SEM
Win Source Part Number 755458-P0403BDG P0403BD
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian P0403BDG P0403BD CAD Model

Description

The P0403BDG is a P-Channel MOSFET from NIKO-SEM (NIKO Semiconductor). It is designed for power management applications requiring efficient and reliable switching. This MOSFET is commonly used in DC-DC converters, load switches, and other power control circuits.

Applications:

  • DC-DC Converters: Used in buck and boost converters for efficient power conversion.
  • Load Switches: Employed to control power distribution in electronic devices.
  • Power Management Circuits: Utilized in battery management systems and power regulation circuits.
  • LED Backlighting: Used in LED driver circuits for display backlighting.
  • Motor Control: Suitable for controlling small DC motors.

Features:

  • P-Channel MOSFET: Offers ease of use in various circuit configurations.
  • Low On-Resistance (RDS(on)): Minimizes power loss during conduction.
  • High Switching Speed: Enables efficient switching performance.
  • Trench MOSFET Technology: Provides improved performance and efficiency.
  • Lead-Free Package: Compliant with environmental regulations.

Benefits:

  • Improved Efficiency: Low RDS(on) reduces conduction losses, enhancing efficiency.
  • Reduced Heat Dissipation: Low RDS(on) minimizes heat generation, improving thermal performance.
  • Fast Switching: High switching speed ensures efficient power conversion.
  • Compact Design: Small package size allows for higher component density.
  • Reliable Performance: NIKO-SEM's quality ensures long-term reliability.

Additional Details:

The P0403BDG typically has a drain-source voltage (VDS) rating of -30V. The gate-source voltage (VGS) is rated to ensure safe operation within specified circuit parameters. It has a continuous drain current (ID) rating that defines the maximum current it can handle without overheating. The RDS(on) value is specified at a particular VGS, providing a benchmark for conduction losses. The MOSFET's gate charge is designed to be low, facilitating fast switching speeds. Its operating temperature range typically extends from -55°C to +150°C, ensuring reliable operation in diverse environments. The package is designed for automated assembly, reducing manufacturing costs and improving production efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,113 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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