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Same model may have multiple batches, images only for reference.
PMV160UP,215 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMV160UP,215

Part No PMV160UP,215
Manufacturer Nexperia USA Inc.
Catalog TRANSISTORS
Description MOSFETs 20 V, 1.2 A P-channel Trench MOSFET
Datasheet
PMV160UP,215 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Nexperia
Technology Si
Mounting Style SMD/SMT
Package / Case SOT-23-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 1.2 A
Rds On - Drain-Source Resistance 210 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage 450 mV
Qg - Gate Charge 3.3 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 480 mW
Channel Mode Enhancement
Packaging Cut Tape
Packaging MouseReel
Packaging Reel
Brand Nexperia
Product Type MOSFETs
Standard Pack Qty 3000
Subcategory Transistors
Ultra Librarian 3D Model Ultra Librarian PMV160UP,215 CAD Model

Description

The Nexperia USA Inc. PMV160UP,215 is a P-channel MOSFET designed for discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 1.2A (Ta)
  • Maximum Rds On @ Id,Vgs: 210 mOhm @ 1.2A, 4.5V
  • Gate-Source Threshold Voltage: 950mV @ 250μA
  • Package: SMD (SMT), TO-236AB (SOT23)
  • Maximum Power Dissipation: 335mW (Ta), 2.17W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V

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