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Same model may have multiple batches, images only for reference.
ISC080N10NM6ATMA1
Same model may have multiple batches, images only for reference.

ISC080N10NM6ATMA1

Part No ISC080N10NM6ATMA1
Manufacturer Infineon Technologies
Catalog TRANSISTORS
Description MOSFETs TRENCH >=100V
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon
Technology Si
Mounting Style SMD/SMT
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 75 A
Rds On - Drain-Source Resistance 8.05 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 3.3 V
Qg - Gate Charge 19 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 100 W
Channel Mode Enhancement
Series ISC080N10
Packaging Cut Tape
Packaging MouseReel
Packaging Reel
Product MOSFETs
Brand Infineon Technologies
Product Type MOSFETs
Standard Pack Qty 5000
Subcategory Transistors
Ultra Librarian 3D Model Ultra Librarian ISC080N10NM6ATMA1 CAD Model

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0042 $50.2100
125+ $0.8240 $103.0000
190+ $0.7983 $151.6770
260+ $0.7725 $200.8500
335+ $0.7468 $250.1780
450+ $0.6695 $301.2750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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