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Same model may have multiple batches, images only for reference.
IPT030N12N3GATMA1
Same model may have multiple batches, images only for reference.

IPT030N12N3GATMA1

Part No IPT030N12N3GATMA1
Manufacturer Infineon Technologies
Catalog TRANSISTORS
Description MOSFETs TRENCH >=100V
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon
Technology Si
Mounting Style SMD/SMT
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 120 V
Id - Continuous Drain Current 237 A
Rds On - Drain-Source Resistance 3 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 158 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 375 W
Channel Mode Enhancement
Packaging Cut Tape
Packaging Reel
Brand Infineon Technologies
Product Type MOSFETs
Standard Pack Qty 2000
Subcategory Transistors
Ultra Librarian 3D Model Ultra Librarian IPT030N12N3GATMA1 CAD Model

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