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PBLS2021D,115

Part No PBLS2021D,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN PREBIAS/PNP 6TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN Pre-Biased, 1 PNP
Maximum Current Collector 100mA, 1.8A
VCEO Maximum Collector-Emitter Breakdown Voltage 50V, 20V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 2.2k
Typical Gain (hFE) (Min) 30 @ 20mA, 5V / 200 @ 1A, 2V
Max Vce (sat) 150mV @ 500μA, 10mA / 210mV @ 100mA, 1.8A
Collector Cut-off Current(Max) 1μA, 100nA
Frequency - Transition 130MHz
Maximum Power Dissipation 760mW
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1086366-PBLS2021D,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PBLS2021D,115 CAD Model

Description

The PBLS2021D,115 is a transistor manufactured by Nexperia USA Inc.

  • Frequency Transition: 130MHz
  • Transistor Configuration: 1 NPN pre-biased and 1 PNP transistor
  • Maximum Current Collector: 100mA and 1.8A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V and 20V
  • Collector Cut-Off Current: 1μA and 100nA
  • Typical Gain: 30 @ 20mA and 5V and 200 @ 1A and 2V
  • Maximum Power Dissipation: 760mW

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