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Same model may have multiple batches, images only for reference.
RN2904(T5L,F,T) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2904(T5L,F,T)

Part No RN2904(T5L,F,T)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description TRANS 2PNP PREBIAS 0.2W US6 / Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Product Status Obsolete
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 47kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 200MHz
Power - Max 200mW
Mounting SMD (SMT)
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6
Base Product Number RN2904
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Names RN2904(T5LFT)TR,RN2904(T5LFT)DKR,RN2904(T5LFT)CT
Standard Package 3,000
Win Source Part Number 1151161-RN2904(T5L,F,T)
Ultra Librarian 3D Model Ultra Librarian RN2904(T5L,F,T) CAD Model

Description

The RN2904(T5L,F,T) is a bipolar transistor array pre-biased component from Toshiba Semiconductor and Storage.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Type: Bipolar transistor array pre-biased
  • Mount: Surface mount
  • Power Rating: 200mW
  • Collector Emitter Breakdown Voltage: 50V (Maximum)
  • Collector Current: 100mA (Maximum)
  • DC Current Gain (hFE): 80 @ 10mA and 5V
  • Frequency Transition: 200MHz
  • Packaging: Tape and reel
  • Standard Package: 3,000
  • Rating: EAR99

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