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Same model may have multiple batches, images only for reference.
RN4985FE,LF(CT Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4985FE,LF(CT

Part No RN4985FE,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description NPN + PNP BRT Q1BSR2.2KOHM Q1BER / Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz, 200MHz
Power - Max 100mW
Mounting SMD (SMT)
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Base Product Number RN4985
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Other Names RN4985FE,LF(CB,RN4985FELF(CTDKR,RN4985FELF(CTTR,RN4985FELF(CTCT
Standard Package 4,000
Win Source Part Number 1113888-RN4985FE,LF(CT
Ultra Librarian 3D Model Ultra Librarian RN4985FE,LF(CT CAD Model

Description

The Toshiba Semiconductor and Storage RN4985FE,LF(CT is a pre-biased transistor that is designed for use in various applications.

  • Power-Max: 100mW
  • Voltage-Collector Emitter Breakdown (Max): 50V
  • Current-Collector (Ic) (Max): 100mA
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • hFE: 80 @ 10mA, 5V
  • Operating Temperature: -40°C to 105°C
  • Supply and Demand Status: good

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