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RN2965(TE85L,F)

Part No RN2965(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description TRANS 2PNP PREBIAS 0.2W US6 / Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 200MHz
Power - Max 200mW
Mounting SMD (SMT)
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6
Base Product Number RN2965
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Names RN2965(TE85LF)DKR,RN2965(TE85LF)CT,RN2965(TE85LF)TR
Standard Package 3,000
Win Source Part Number 1134917-RN2965(TE85L,F)
Ultra Librarian 3D Model Ultra Librarian RN2965(TE85L,F) CAD Model

Description

This is a pre-biased transistor array with a Win Source Part Number of 1134917-RN2965(TE85L,F).

  • Power Rating: 200mW
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Current - Collector (Ic) (Max): 100mA
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250μA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Frequency - Transition: 200MHz
  • Packaging: Tape and Reel
  • Standard Package: 3,000
  • Mounting: SMD (SMT)
  • Package/Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
  • Resistor - Base (R1): 2.2kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • HTSUS: 8541.21.0095
  • Manufacturer: Toshiba Semiconductor and Storage
  • Base Product Number: RN2965

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