The UPD43256BGU-A12 is a 32,768-word x 8-bit high-speed CMOS static RAM (SRAM) manufactured by NEC (now Renesas Electronics). This SRAM is designed for applications requiring fast access times and low power consumption. It is commonly used in cache memory, buffer memory, and other high-performance memory systems.

Applications

• Cache Memory: Used as cache memory in microprocessors and embedded systems to improve performance.
• Buffer Memory: Employed as buffer memory in data acquisition and signal processing systems.
• Workstation Memory: Utilized in workstation systems requiring high-speed memory access.
• Embedded Systems: Integrated into embedded systems for data storage and program execution.
• High-Performance Computing: Found in high-performance computing applications requiring fast memory access.

Features

• High-Speed Access Time: Features a fast access time of 12ns for quick data retrieval.
• Low Power Consumption: Designed for low power consumption, making it suitable for battery-powered applications.
• CMOS Technology: Utilizes CMOS technology for high-speed performance and low power dissipation.
• 32K x 8-bit Organization: Organized as 32,768 words x 8 bits for efficient data storage.
• Fully Static Operation: Requires no clock or refresh signals for operation.
• Three-State Output: Features a three-state output for easy memory expansion.
• Wide Operating Voltage Range: Operates at a supply voltage of 5V ± 10%.
• Data Retention Capability: Retains data even when power is removed.

Benefits

• Enhanced System Performance: Fast access time improves system performance and response time.
• Reduced Power Consumption: Low power consumption minimizes energy usage and extends battery life.
• Simplified System Design: Fully static operation simplifies system design and eliminates the need for refresh circuitry.
• Flexible Memory Expansion: Three-state output enables easy memory expansion and integration with other memory devices.
• Reliable Data Storage: Data retention capability ensures reliable data storage even during power outages.
• Versatile Application: Suitable for a wide range of high-speed memory applications.
• Cost-Effective Solution: Provides a cost-effective solution for high-performance memory requirements.

Additional Details

The UPD43256BGU-A12 typically operates within a specified temperature range. It is available in a 28-pin DIP (Dual In-line Package) or SOJ (Small Outline J-lead) package. Detailed technical specifications, including access times, supply current, and pinout diagrams, are available in the Renesas Electronics product datasheet.