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UPA2350BT1G(1)-E4-A/JM

Part No UPA2350BT1G(1)-E4-A/JM
Manufacturer NEC
Catalog Electronic Wholesale
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 06No
Reference case SMD
Manufacturer NEC
Manufacturer Homepage www.nec.com
Win Source Part Number 757793-UPA2350BT1G(1)-E4-A/JM
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UPA2350BT1G(1)-E4-A/JM CAD Model

Description

The UPA2350BT1G(1)-E4-A/JM is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by NEC. MOSFETs are widely used as electronic switches in various applications, including power management, motor control, and signal amplification. P-channel MOSFETs conduct when the gate voltage is lower than the source voltage, making them suitable for high-side switching applications.

Applications:

  • Load Switching
  • Power Management Circuits
  • DC-DC Converters
  • Battery Management Systems
  • Motor Control

Features:

  • P-Channel MOSFET
  • Low On-Resistance (RDS(on))
  • Low Gate Charge (Qg)
  • Fast Switching Speed
  • Surface Mount Device (SMD)
  • Small Package Size

Benefits:

  • Efficient Switching: Low on-resistance minimizes power losses during conduction.
  • Fast Switching Speed: Enables high-frequency operation in power converters.
  • Compact Design: Small package size allows for integration into dense circuit boards.
  • Simplified Gate Drive: P-channel MOSFETs can be easily driven with a low-side N-channel MOSFET or BJT.
  • Reduced Heat Dissipation: Low on-resistance and low gate charge minimize heat generation.

Additional Details:

The UPA2350BT1G(1)-E4-A/JM is characterized by its low on-resistance (RDS(on)), which is the resistance between the drain and source terminals when the MOSFET is turned on. A lower RDS(on) results in lower power dissipation and higher efficiency. The gate charge (Qg) is the amount of charge required to turn the MOSFET on or off. A lower gate charge leads to faster switching speeds and reduced gate drive losses. The specific voltage and current ratings of the UPA2350BT1G(1)-E4-A/JM can be found in the NEC datasheet. Proper thermal management is important to ensure that the MOSFET operates within its specified temperature limits. Careful PCB layout is crucial for minimizing parasitic inductance and capacitance, which can affect the switching performance of the MOSFET. The E4-A/JM suffix typically indicates the specific tape and reel packaging used for automated assembly. It's important to adhere to the recommended soldering profile during assembly to prevent damage to the device.

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