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TM55DZ-H

Part No TM55DZ-H
Manufacturer Mitsubishi
Catalog Electronic Wholesale
Description MEDIUM POWER GENERAL USE INSULATED TYPE
Sample
Rohs State rohs
ECAD Module
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Manufacturer Mitsubishi
Win Source Part Number 1270676-TM55DZ-H
Manufacturer Homepage www.mitsubishichips.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TM55DZ-H CAD Model

Description

The TM55DZ-H is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Mitsubishi Electric. IGBT modules are power semiconductor devices that combine the advantages of MOSFETs and bipolar junction transistors (BJTs). They are used in high-power switching applications.

Applications:

  • Inverter drives (e.g., motor control, variable frequency drives).
  • Uninterruptible power supplies (UPS).
  • Welding machines.
  • Induction heating.
  • Power factor correction (PFC) circuits.

Features:

  • High voltage and current handling capability.
  • Low saturation voltage.
  • Fast switching speed.
  • Isolated baseplate.
  • Built-in freewheeling diodes.
  • Easy to mount.

Benefits:

  • Efficient power conversion: Low saturation voltage minimizes power losses.
  • High switching frequency: Enables the design of smaller and more efficient power converters.
  • Robust performance: Can withstand high voltages and currents.
  • Simplified design: Integrated freewheeling diodes reduce the number of external components required.
  • Improved thermal management: Isolated baseplate facilitates efficient heat dissipation.

Additional Details:

While a precise datasheet is needed for complete specifications, typical IGBT modules like the TM55DZ-H are characterized by their voltage and current ratings (e.g., 600V, 1200V, 50A, 100A), switching frequency, and thermal resistance. The TM55DZ-H likely includes internal protection features such as short-circuit protection. The IGBT module's isolated baseplate allows for mounting on a heatsink to dissipate heat generated during operation. Mitsubishi Electric IGBT modules are known for their high reliability and performance in demanding power electronic applications. Specifications like the VCE(sat) (collector-emitter saturation voltage), gate charge, and switching times (turn-on and turn-off) are crucial for power circuit design and efficiency calculations. Careful thermal design and selection of appropriate gate drive circuitry are critical for reliable operation of the IGBT. Referencing the specific Mitsubishi datasheet for the TM55DZ-H is essential before incorporating it into any design to ensure it meets the required performance parameters.

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