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APT50GF120B2R

Part No APT50GF120B2R
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 1200V 135A 781W TMAX
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 135A
Pulsed Collector Current 150A
Collector-emitter saturation voltage(Max) 3V @ 15V, 50A
Maximum Power Dissipation 781W
Total Switching Energy(Ets) 3.6mJ (on), 2.64mJ (off)
Input Type Standard
Gate Charge 340nC
Turn-on and Turn-off delay time 25ns/260ns
Testing Conditions 800V, 50A, 1 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Dimension TO-247-3 Variant
Win Source Part Number 051471-APT50GF120B2R
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian APT50GF120B2R CAD Model

Description

Description of APT50GF120B2R

The APT50GF120B2R transistor is engineered for ultimate efficiency and performance in high-current applications. With its capacity to handle substantial power loads, it stands as a critical component in power-sensitive environments.

Features and Benefits

  • High Power Handling: Capable of withstanding large currents without performance degradation.
  • Advanced Construction: Uses cutting-edge materials to enhance functionality and longevity.
  • Fast Recovery Time: Optimizes system speeds and operational efficiency.
  • Versatile Design: Adaptable for various industrial uses.

Applications

  • Solar Inverters
  • Industrial Automation Equipment
  • HVAC Controls
  • Battery Management Systems

The reliability and power efficiency of the APT50GF120B2R make it a primary choice for developers looking to innovate in the sphere of high-power systems.

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Shipping Information

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