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Same model may have multiple batches, images only for reference.
APT48M80B2 Real Image
Same model may have multiple batches, images only for reference.

APT48M80B2

Part No APT48M80B2
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 8
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 800V
Current - Continuous Drain (Id) @ 25°C 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs 305nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 9330pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 1135W (Tc)
Rds On (Maximum) @ Id, Vgs 190 mOhm @ 24A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package T-MAX [B2]
Package TO-247-3 Variant
Win Source Part Number 1146787-APT48M80B2
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name APT48M80B2
Introduction Date October 30, 2007
ECCN EAR99
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian APT48M80B2 CAD Model

Description

The APT48M80B2 is a POWER MOS 8 series MOSFET manufactured by Microsemi Corporation.

  • Current-Continuous Drain: 49A (Tc) @ 25°C
  • Maximum Power Dissipation: 1135W (Tc)
  • Technology: N-channel
  • Drain-Source Voltage: 800V
  • Gate Charge (Qg) @ Maximum Voltage (Vgs): 305nC @ 10V
  • Input Capacitance (Ciss) @ Maximum Voltage (Vds): 9330pF @ 25V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-247-3 variant
  • Supply and Demand Status: Limited

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