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APT25SM120B

Part No APT25SM120B
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1200V 25A TO247 / N-Channel 1200 V 25A (Tc) 175W (Tc) Through Hole TO-247
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Microsemi Corporation
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 175mOhm @ 10A, 20V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 20 V
Vgs (Max) +25V, -10V
Power Dissipation (Max) 175W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names APT25SM120B-ND,150-APT25SM120B
Standard Package 1
Win Source Part Number 1027135-APT25SM120B
Ultra Librarian 3D Model Ultra Librarian APT25SM120B CAD Model

Description

The Microsemi Corporation APT25SM120B is an N-Channel SiCFET (Silicon Carbide) transistor that is part of the Transistors - FETs, MOSFETs - Single category.

  • Win Source Part Number: 1027135-APT25SM120B
  • Package: Bulk
  • Standard Package: 1
  • Operating Temperature Range: -55°C ~ 175°C (TJ)
  • Part Status: Obsolete
  • Maximum Power Dissipation: 175W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 20 V
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $23.6863 $71.0589
6+ $19.4349 $116.6094
10+ $18.8276 $188.2760
13+ $18.2201 $236.8613
17+ $17.6128 $299.4176
22+ $15.7909 $347.3998
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,430 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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