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APT22F120B2

Part No APT22F120B2
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel FREDFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 8
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1200V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs 260nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 8370pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 1040W (Tc)
Rds On (Maximum) @ Id, Vgs 700 mOhm @ 12A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package T-MAX [B2]
Package TO-247-3 Variant
Win Source Part Number 1146682-APT22F120B2
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name APT22F120B2
Introduction Date January 05, 2006
ECCN EAR99
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian APT22F120B2 CAD Model

Description

The APT22F120B2 is a power MOS 8 transistor manufactured by Microsemi Corporation.

  • Win Source Part Number: 1146682
  • Supply and Demand Status: Limited
  • Maximum Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Maximum Power Dissipation: 1040W (Tc)
  • Technology: MOSFET

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