Product Overview: 25AA040AT-I/MS from Microchip Technology

The 25AA040AT-I/MS is a high-performance, 4-Kbit Serial Electrically Erasable Programmable Read-Only Memory (EEPROM) device from the renowned manufacturer, Microchip Technology. This memory module is an ideal solution for applications that require data storage that can be electrically erased and reprogrammed. It is designed to deliver reliability and flexibility with its advanced features and specifications.

Key Features

• Memory Size: The device offers 4 Kbits of memory, which is organized as 512 x 8 bits, suitable for storing configuration parameters, serial numbers, and calibration data.
• Interface: It utilizes the industry-standard Serial Peripheral Interface (SPI) bus, which ensures compatibility with a wide range of microcontrollers and is easy to integrate into various systems.
• Operating Voltage Range: The device operates over a broad voltage range from 1.8V to 5.5V, making it versatile for both low-power and standard applications.
• Temperature Range: With an industrial temperature range of -40°C to +85°C, the 25AA040AT-I/MS is robust and reliable for use in harsh environments.
• Package: It comes in a compact 8-lead MSOP (Mini Small Outline Package) that is suitable for space-constrained applications.
• Write Cycle Time: It features a maximum write cycle time of 5 ms, allowing for quick and efficient data handling.
• Endurance: The EEPROM is capable of 1 million erase/write cycles, ensuring a long operational lifespan.
• Data Retention: Data retention is rated at a minimum of 100 years, providing a secure and permanent storage solution.

Applications

The 25AA040AT-I/MS is designed for a diverse array of applications, including but not limited to:

• Industrial and automotive control systems
• Consumer electronics
• Medical devices
• Smart cards
• Networking equipment
• Portable devices

With its robust design and reliable data storage capabilities, the 25AA040AT-I/MS from Microchip Technology is an excellent choice for designers and engineers looking for a non-volatile memory solution that combines performance with long-term dependability.