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KRA306E-RTK/P

Part No KRA306E-RTK/P
Manufacturer KEC
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Categories Uncategorized
Manufacturer KEC
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 826970-KRA306E-RTK/P
Ultra Librarian 3D Model Ultra Librarian KRA306E-RTK/P CAD Model

Description

The KRA306E-RTK/P is a PNP bipolar junction transistor (BJT) manufactured by KEC. Designed for switching and amplification purposes, it belongs to the 'KRA' series, commonly used in various electronic circuits for general-purpose applications.

Applications

  • Switching Circuits: Used for controlling current flow in electronic devices.
  • Amplifier Circuits: Employed in small-signal amplifiers for audio or radio frequency applications.
  • Load Drivers: Can be used as a driver for loads such as LEDs or relays.
  • General Purpose Applications: Suitable for a broad range of general-purpose applications in electronic circuits.
  • Signal Inversion: Useful for inverting signals in digital circuits.

Features

  • PNP Transistor: A PNP transistor, suitable for applications requiring a low-side switch.
  • High Current Gain (hFE): Offers good amplification capabilities.
  • Low Saturation Voltage: Ensures efficient switching characteristics.
  • Small Package Size: Housed in a compact surface-mount package (SMD) for space-saving designs.
  • RoHS Compliant: Compliant with RoHS standards for environmental protection.

Benefits

  • Efficient Switching: Allows for quick and efficient switching in electronic circuits.
  • Compact Design: Enables integration into small and space-constrained applications.
  • Cost-Effective: Provides an affordable solution for both amplification and switching needs.
  • Improved Circuit Performance: Enhances overall circuit performance and stability.
  • Versatile Use: Suitable for a wide array of electronic circuit applications.

Additional Details

The KRA306E-RTK/P typically features a collector-emitter voltage (VCEO) of around -50V, a collector current (IC) of approximately -150mA, and a power dissipation (PD) of roughly 200mW. The current gain (hFE) is a critical factor when designing amplifier circuits. The operating temperature range typically spans from -55°C to +150°C. With its low saturation voltage, this transistor provides efficient switching capabilities. To ensure the transistor's proper and reliable operation, careful consideration of the voltage, current, and power dissipation ratings is essential.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,085+ $0.0277 $57.7545
5,000+ $0.0231 $115.5000
7,895+ $0.0219 $172.9005
11,115+ $0.0208 $231.1920
13,890+ $0.0208 $288.9120
18,750+ $0.0185 $346.8750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 111,000 pieces
MOQ: 2085 pcs
Order Increment : 1 pcs
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