IXTP36N30P Real Image
Same model may have multiple batches, images only for reference.

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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 300V
Id - Continuous Drain Current 36A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 110mOhm at 18A, 10V
Gate Source Voltage(th) (Maximum) at Id 5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 70nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 2250pF at 25V
Power Dissipation (Maximum) 300W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1191283-IXTP36N30P
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTP36N30P CAD Model

Description

The IXYS IXTP36N30P is an N-channel MOSFET transistor designed for high-speed switching applications.

  • Drain-Source Breakdown Voltage: 300V
  • Continuous Drain Current: 36A
  • Gate-Source Voltage Threshold: 5.5V @ 250μA
  • Gate Charge: 70nC @ 10V
  • Input Capacitance: 2250pF @ 25V
  • On-Resistance: 110mOhm @ 18A and 10V
  • Package: Through-hole TO-220AB
  • Manufacturer Homepage: www.ixys.com
  • Popularity: Medium
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.5410 $55.4100
22+ $4.5465 $100.0230
35+ $4.4044 $154.1540
47+ $4.2623 $200.3281
61+ $4.1202 $251.3322
82+ $3.6940 $302.9080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 39 pieces
MOQ: 10 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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