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Same model may have multiple batches, images only for reference.
IXTP08N50D2 Real Image
Same model may have multiple batches, images only for reference.

IXTP08N50D2

Part No IXTP08N50D2
Manufacturer IXYS
Catalog FETs - Single
Description MOSFET N-CH 500V 800MA TO220AB / N-Channel MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) at 25°C 800mA (Tc)
Rds On (Maximum) at Id, Vgs 4.6Ohm at 400mA, 0V
Gate Charge (Qg) (Maximum) at Vgs 12.7nC at 5V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 312pF at 25V
FET Feature Depletion Mode
Power Dissipation (Maximum) 60W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 813455-IXTP08N50D2
Ultra Librarian 3D Model Ultra Librarian IXTP08N50D2 CAD Model

Description

The IXYS MOSFET (Metal Oxide) N-Channel FET Depletion Mode has a drain to source voltage (Vdss) of 500V.

  • Power Dissipation (Maximum): 60W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Operating Temperature: -55°C ~ 150°C
  • Gate Charge (Qg) (maximum) @ Vgs: 12.7nC @ 5V
  • Mounting Type: Through hole
  • Supplier Device Package: TO-220AB

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