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Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) at 25°C 800mA (Tc)
Rds On (Maximum) at Id, Vgs 4.6Ohm at 400mA, 0V
Gate Charge (Qg) (Maximum) at Vgs 12.7nC at 5V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 312pF at 25V
FET Feature Depletion Mode
Power Dissipation (Maximum) 60W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 813455-IXTP08N50D2
Ultra Librarian 3D Model Ultra Librarian IXTP08N50D2 CAD Model

Description

The IXYS MOSFET (Metal Oxide) N-Channel FET Depletion Mode has a drain to source voltage (Vdss) of 500V.

  • Power Dissipation (Maximum): 60W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Operating Temperature: -55°C ~ 150°C
  • Gate Charge (Qg) (maximum) @ Vgs: 12.7nC @ 5V
  • Mounting Type: Through hole
  • Supplier Device Package: TO-220AB

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